Abstract
In this study, we apply the densities of geometrically necessary (GN) crystal defects, i.e., GN dislocation and GN incompatibility considering dynamic recovery to tile hardening law of a crystal in order to express almost crystal defects as geometrical quantities. Moreover, the quantitative confirmation process of the generations of subdivisions is proposed, and the information of induced grain is introduced into the strain rate sensitivity. A dislocation-crystal plasticity FE simulation is carried out for large deformation of an FCC polycrystal under plane strain condition. Distributions of crystal defects and crystal orientation in a specimen are visualized and the separation of grains is discussed on the basis of the results obtained here.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Pages | 215-220 |
| Number of pages | 6 |
| Volume | 503-504 |
| Publication status | Published - 2006 |
| Event | 3rd International Conference on Nanomaterials by Severe Plastics Deformation, NanoSPD3 - Fukuoka, Japan Duration: 2005 Sep 22 → 2005 Sep 26 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 503-504 |
| ISSN (Print) | 02555476 |
Other
| Other | 3rd International Conference on Nanomaterials by Severe Plastics Deformation, NanoSPD3 |
|---|---|
| Country | Japan |
| City | Fukuoka |
| Period | 05/9/22 → 05/9/26 |
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Keywords
- Crystal plasticity
- Dynamic recovery
- Geometrically necessary dislocation density
- Grain boundary
- Incompatibility
- Multiscale modeling
- Subdivision
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Modeling and simulation of crystal plasticity based on GN crystal defects for ultrafine-grained metals induced by severe plastic deformation. / Oishi, Shingo; Aoyagi, Yoshiteru; Shizawa, Kazuyuki.
Materials Science Forum. Vol. 503-504 2006. p. 215-220 (Materials Science Forum; Vol. 503-504).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Modeling and simulation of crystal plasticity based on GN crystal defects for ultrafine-grained metals induced by severe plastic deformation
AU - Oishi, Shingo
AU - Aoyagi, Yoshiteru
AU - Shizawa, Kazuyuki
PY - 2006
Y1 - 2006
N2 - In this study, we apply the densities of geometrically necessary (GN) crystal defects, i.e., GN dislocation and GN incompatibility considering dynamic recovery to tile hardening law of a crystal in order to express almost crystal defects as geometrical quantities. Moreover, the quantitative confirmation process of the generations of subdivisions is proposed, and the information of induced grain is introduced into the strain rate sensitivity. A dislocation-crystal plasticity FE simulation is carried out for large deformation of an FCC polycrystal under plane strain condition. Distributions of crystal defects and crystal orientation in a specimen are visualized and the separation of grains is discussed on the basis of the results obtained here.
AB - In this study, we apply the densities of geometrically necessary (GN) crystal defects, i.e., GN dislocation and GN incompatibility considering dynamic recovery to tile hardening law of a crystal in order to express almost crystal defects as geometrical quantities. Moreover, the quantitative confirmation process of the generations of subdivisions is proposed, and the information of induced grain is introduced into the strain rate sensitivity. A dislocation-crystal plasticity FE simulation is carried out for large deformation of an FCC polycrystal under plane strain condition. Distributions of crystal defects and crystal orientation in a specimen are visualized and the separation of grains is discussed on the basis of the results obtained here.
KW - Crystal plasticity
KW - Dynamic recovery
KW - Geometrically necessary dislocation density
KW - Grain boundary
KW - Incompatibility
KW - Multiscale modeling
KW - Subdivision
UR - http://www.scopus.com/inward/record.url?scp=35248853771&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35248853771&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0878499857
SN - 9780878499854
VL - 503-504
T3 - Materials Science Forum
SP - 215
EP - 220
BT - Materials Science Forum
ER -