Abstract
A feature profile evolution model of a trench in SiO2 is developed in a two-frequency capacitively coupled plasma in CF 4(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms or the bias amplitude and the position on the wafer.
| Original language | English |
|---|---|
| Pages (from-to) | 8876-8882 |
| Number of pages | 7 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2006 Nov 15 |
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Keywords
- Charging
- Competitive process
- Feature profile evolution
- Radial uniformity
- SiO etching
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Modeling of feature profile evolution in SiO2 as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma. / Shimada, Takashi; Yagisawa, Takashi; Makabe, Toshiaki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 11, 15.11.2006, p. 8876-8882.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modeling of feature profile evolution in SiO2 as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma
AU - Shimada, Takashi
AU - Yagisawa, Takashi
AU - Makabe, Toshiaki
PY - 2006/11/15
Y1 - 2006/11/15
N2 - A feature profile evolution model of a trench in SiO2 is developed in a two-frequency capacitively coupled plasma in CF 4(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms or the bias amplitude and the position on the wafer.
AB - A feature profile evolution model of a trench in SiO2 is developed in a two-frequency capacitively coupled plasma in CF 4(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms or the bias amplitude and the position on the wafer.
KW - Charging
KW - Competitive process
KW - Feature profile evolution
KW - Radial uniformity
KW - SiO etching
UR - http://www.scopus.com/inward/record.url?scp=34547888047&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547888047&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.8876
DO - 10.1143/JJAP.45.8876
M3 - Article
AN - SCOPUS:34547888047
VL - 45
SP - 8876
EP - 8882
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
ER -