Modeling of feature profile evolution in SiO2 as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma

Takashi Shimada; Takashi Yagisawa; Toshiaki Makabe

doi:10.1143/JJAP.45.8876

Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma

Takashi Shimada, Takashi Yagisawa, Toshiaki Makabe

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A feature profile evolution model of a trench in SiO₂ is developed in a two-frequency capacitively coupled plasma in CF ₄(5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms or the bias amplitude and the position on the wafer.

Original language	English
Pages (from-to)	8876-8882
Number of pages	7
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.45.8876
Publication status	Published - 2006 Nov 15
Externally published	Yes

Keywords

Charging
Competitive process
Feature profile evolution
Radial uniformity
SiO etching

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.8876

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Shimada, T., Yagisawa, T., & Makabe, T. (2006). Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(11), 8876-8882. https://doi.org/10.1143/JJAP.45.8876

Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma. / Shimada, Takashi; Yagisawa, Takashi; Makabe, Toshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 11, 15.11.2006, p. 8876-8882.

Research output: Contribution to journal › Article › peer-review

Shimada, T, Yagisawa, T & Makabe, T 2006, 'Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 11, pp. 8876-8882. https://doi.org/10.1143/JJAP.45.8876

Shimada T, Yagisawa T, Makabe T. Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Nov 15;45(11):8876-8882. https://doi.org/10.1143/JJAP.45.8876

Shimada, Takashi ; Yagisawa, Takashi ; Makabe, Toshiaki. / Modeling of feature profile evolution in SiO₂ as functions of radial position and bias voltage under competition among charging, deposition, and etching in two-frequency capacitively coupled plasma. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 11. pp. 8876-8882.

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