Modeling of gas flow in the simulation of H"SUP -" ion source

M. Ogasawara, Y. Okuda, M. Shirai, S. Mitsuhashi, A. Hatayama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A model of actual gas supply into the ion source is presented. Filling pressure is related to gas flow and conductance of the H"SUP -" extraction system. The rate equation for the H"SUB 2" molecule simulation of a negative outflow rates related with the filling pressure are employed in the numerical simulation of a negative hydrogen in source. With the results of numerical simulation, the H number conservation relation and pressure balance equation are shown to be inaccurate especially for higher electron temperture. (after Authors)

Original languageEnglish
Pages (from-to)1082-1084
Number of pages3
JournalReview of Scientific Instruments
Issue number3
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Instrumentation


Dive into the research topics of 'Modeling of gas flow in the simulation of H"SUP -" ion source'. Together they form a unique fingerprint.

Cite this