Modeling of gas flow in the simulation of H"SUP -" ion source

M. Ogasawara; Y. Okuda; M. Shirai; S. Mitsuhashi; A. Hatayama

doi:10.1063/1.1146763

Modeling of gas flow in the simulation of H"SUP -" ion source

M. Ogasawara, Y. Okuda, M. Shirai, S. Mitsuhashi, A. Hatayama

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A model of actual gas supply into the ion source is presented. Filling pressure is related to gas flow and conductance of the H"SUP -" extraction system. The rate equation for the H"SUB 2" molecule simulation of a negative outflow rates related with the filling pressure are employed in the numerical simulation of a negative hydrogen in source. With the results of numerical simulation, the H number conservation relation and pressure balance equation are shown to be inaccurate especially for higher electron temperture. (after Authors)

Original language	English
Pages (from-to)	1082-1084
Number of pages	3
Journal	Review of Scientific Instruments
Volume	67
Issue number	3
DOIs	https://doi.org/10.1063/1.1146763
Publication status	Published - 1996 Jan 1

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1146763

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AU - Ogasawara, M.

AU - Okuda, Y.

AU - Shirai, M.

AU - Mitsuhashi, S.

AU - Hatayama, A.

PY - 1996/1/1

Y1 - 1996/1/1

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AB - A model of actual gas supply into the ion source is presented. Filling pressure is related to gas flow and conductance of the H"SUP -" extraction system. The rate equation for the H"SUB 2" molecule simulation of a negative outflow rates related with the filling pressure are employed in the numerical simulation of a negative hydrogen in source. With the results of numerical simulation, the H number conservation relation and pressure balance equation are shown to be inaccurate especially for higher electron temperture. (after Authors)

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Modeling of gas flow in the simulation of H"SUP -" ion source

Abstract

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