Modeling of gas flow in the simulation of H"SUP -" ion source

M. Ogasawara, Y. Okuda, M. Shirai, S. Mitsuhashi, A. Hatayama

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Abstract

A model of actual gas supply into the ion source is presented. Filling pressure is related to gas flow and conductance of the H"SUP -" extraction system. The rate equation for the H"SUB 2" molecule simulation of a negative outflow rates related with the filling pressure are employed in the numerical simulation of a negative hydrogen in source. With the results of numerical simulation, the H number conservation relation and pressure balance equation are shown to be inaccurate especially for higher electron temperture. (after Authors)

Original languageEnglish
Pages (from-to)1082-1084
Number of pages3
JournalReview of Scientific Instruments
Volume67
Issue number3
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Instrumentation

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    Ogasawara, M., Okuda, Y., Shirai, M., Mitsuhashi, S., & Hatayama, A. (1996). Modeling of gas flow in the simulation of H"SUP -" ion source. Review of Scientific Instruments, 67(3), 1082-1084. https://doi.org/10.1063/1.1146763