Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device

C. H. Shon, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As the scale of semiconductors shrinks and the interconnect layer develops to ten's level, the resistance-capacitance (RC) delay of signals through interconnection materials becomes a big obstacle for high speed operation of integrated circuit. For the fast operation of device, RC (product of resistivity and capacitance) delay must be made smaller. The resistivity is determined by the interconnect material and capacitance, by dielectric material. In order to meet the requirement, low resistivity Cu metal and low dielectric constant (low-K) materials are used. Among the many candidates for the low-K inter-metal dielectric (IMD) materials, organic materials will be promising candidates. As a result, new etching conditions must be developed to match the material properties. In this research, we present the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with H2/N 2 gas mixture which includes neutral-species transport model, based on the relaxation continuum (RCT) model. Not only the plasma transport and spatial distribution, but also those of neutral gas are important issue for the etching process. Especially in H2/N2 plasma, NH x neutrals have a big influence on the etching of organic materials. Moreover the distributions of excited species influence the plasma density and profile. Therefore we include the neutral transport model as well as plasma one in this calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatiotemporal steady state profile could be obtained. In the simulation of neutral species, the interactions of excited states, vibrational levels of both H2 and N2 molecules, and NHx molecules are considered.

Original languageEnglish
Title of host publicationIEEE International Conference on Plasma Science
Pages459
Number of pages1
Publication statusPublished - 2003
Event2003 IEEE International Conference on Plasma Science - Jeju, Korea, Republic of
Duration: 2003 Jun 22003 Jun 5

Other

Other2003 IEEE International Conference on Plasma Science
CountryKorea, Republic of
CityJeju
Period03/6/203/6/5

Fingerprint

etching
capacitance
organic materials
electrical resistivity
neutral gases
profiles
metals
plasma density
integrated circuits
gas mixtures
molecules
spatial distribution
simulation
high speed
permittivity
continuums
requirements
products
excitation
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Shon, C. H., & Makabe, T. (2003). Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device. In IEEE International Conference on Plasma Science (pp. 459)

Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device. / Shon, C. H.; Makabe, T.

IEEE International Conference on Plasma Science. 2003. p. 459.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shon, CH & Makabe, T 2003, Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device. in IEEE International Conference on Plasma Science. pp. 459, 2003 IEEE International Conference on Plasma Science, Jeju, Korea, Republic of, 03/6/2.
Shon CH, Makabe T. Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device. In IEEE International Conference on Plasma Science. 2003. p. 459
Shon, C. H. ; Makabe, T. / Modeling of N2/H2 Plasma for Low-k Material Etching in a Capacitively Coupled Plasma Device. IEEE International Conference on Plasma Science. 2003. pp. 459
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