Modeling of plasmas for dry etching in ULSI technologies

Z. Lj Petrovic, S. Sakadzic, Z. M. Raspopovic, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we give a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. Decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Microelectronics, ICM
PublisherIEEE
Pages433-436
Number of pages4
Volume2
Publication statusPublished - 1999
Externally publishedYes
Event22nd International Conference on Microelectronics (MEL 2000) - Nis, Yugoslavia
Duration: 2000 May 142000 May 17

Other

Other22nd International Conference on Microelectronics (MEL 2000)
CityNis, Yugoslavia
Period00/5/1400/5/17

Fingerprint

Dry etching
Plasmas
Topography
Etching
Plasma applications
Microelectronics
Aspect ratio

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Petrovic, Z. L., Sakadzic, S., Raspopovic, Z. M., & Makabe, T. (1999). Modeling of plasmas for dry etching in ULSI technologies. In Proceedings of the International Conference on Microelectronics, ICM (Vol. 2, pp. 433-436). IEEE.

Modeling of plasmas for dry etching in ULSI technologies. / Petrovic, Z. Lj; Sakadzic, S.; Raspopovic, Z. M.; Makabe, T.

Proceedings of the International Conference on Microelectronics, ICM. Vol. 2 IEEE, 1999. p. 433-436.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Petrovic, ZL, Sakadzic, S, Raspopovic, ZM & Makabe, T 1999, Modeling of plasmas for dry etching in ULSI technologies. in Proceedings of the International Conference on Microelectronics, ICM. vol. 2, IEEE, pp. 433-436, 22nd International Conference on Microelectronics (MEL 2000), Nis, Yugoslavia, 00/5/14.
Petrovic ZL, Sakadzic S, Raspopovic ZM, Makabe T. Modeling of plasmas for dry etching in ULSI technologies. In Proceedings of the International Conference on Microelectronics, ICM. Vol. 2. IEEE. 1999. p. 433-436
Petrovic, Z. Lj ; Sakadzic, S. ; Raspopovic, Z. M. ; Makabe, T. / Modeling of plasmas for dry etching in ULSI technologies. Proceedings of the International Conference on Microelectronics, ICM. Vol. 2 IEEE, 1999. pp. 433-436
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