Modeling of plasmas for dry etching in ULSI technologies

Z. Lj Petrovic, S. Sakadzic, Z. M. Raspopovic, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we give a review of some of the recent results obtained in modeling of radio frequency (RF) plasmas used for plasma processing. Decreasing sizes of structures that are being processed gives rise to topography dependent etching, which poses a problem for designing plasma reactors. In this paper we discuss how some recently derived characteristics of particle transport may be incorporated in models of such plasmas especially having in mind the search for improvement of plasma reactors to avoid topography dependent etching efficiency due to the high aspect ratio of microelectronic device structures.

Original languageEnglish
Title of host publication2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PublisherIEEE
Pages433-436
Number of pages4
ISBN (Print)0780352351, 9780780352353
DOIs
Publication statusPublished - 1999 Jan 1
Event22nd International Conference on Microelectronics (MIEL 2000) - Nis, Yugoslavia
Duration: 2000 May 142000 May 17

Publication series

Name2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume2

Conference

Conference22nd International Conference on Microelectronics (MIEL 2000)
CityNis, Yugoslavia
Period00/5/1400/5/17

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Petrovic, Z. L., Sakadzic, S., Raspopovic, Z. M., & Makabe, T. (1999). Modeling of plasmas for dry etching in ULSI technologies. In 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings (pp. 433-436). (2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings; Vol. 2). IEEE. https://doi.org/10.1109/icmel.2000.838726