Abstract
Two-frequency capacitively coupled plasmas (2f-CCP) are commonly used as a powerful tool for etching of metallic and dielectric materials. Functional separation between two sources, by which independent control of high-density plasma production and high-energy ion injection onto a wafer surface can be realized, will be strongly required for a precise control of the plasma etcher. When increasing the size of the wafer and aiming at high productivity, radial uniformity in the characteristics of Si O2 etching will become a more essential issue to be addressed. The predicted radial uniformity at the wafer interface and the functional separation have been examined numerically by using VicAddress [in Advances in Low Temperature RF plasmas, edited by T. Makabe (Elsevier, Amsterdam, 2002)] in a 2f-CCP etcher in C F4 (5%) Ar at 50 mTorr. This etcher was driven at very high frequency (100 MHz) for the production of high-density plasma and at low frequency (1 MHz) for the bias source. The plasma structure and ion velocity distribution at a wafer interface, which have a direct influence on the property of etching, are mainly discussed. Close to the wafer edge, the distortion of the potential intrinsic to the etcher has a greater effect on the ion angular distribution rather than on the ion energy distribution, resulting in a reduction of the radial uniformity of etching.
| Original language | English |
|---|---|
| Pages (from-to) | 2212-2217 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 23 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2005 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Modeling of radial uniformity at a wafer interface in a 2f-CCP for Si O2 etching. / Yagisawa, T.; Shimada, T.; Makabe, T.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5, 2005, p. 2212-2217.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Modeling of radial uniformity at a wafer interface in a 2f-CCP for Si O2 etching
AU - Yagisawa, T.
AU - Shimada, T.
AU - Makabe, T.
PY - 2005
Y1 - 2005
N2 - Two-frequency capacitively coupled plasmas (2f-CCP) are commonly used as a powerful tool for etching of metallic and dielectric materials. Functional separation between two sources, by which independent control of high-density plasma production and high-energy ion injection onto a wafer surface can be realized, will be strongly required for a precise control of the plasma etcher. When increasing the size of the wafer and aiming at high productivity, radial uniformity in the characteristics of Si O2 etching will become a more essential issue to be addressed. The predicted radial uniformity at the wafer interface and the functional separation have been examined numerically by using VicAddress [in Advances in Low Temperature RF plasmas, edited by T. Makabe (Elsevier, Amsterdam, 2002)] in a 2f-CCP etcher in C F4 (5%) Ar at 50 mTorr. This etcher was driven at very high frequency (100 MHz) for the production of high-density plasma and at low frequency (1 MHz) for the bias source. The plasma structure and ion velocity distribution at a wafer interface, which have a direct influence on the property of etching, are mainly discussed. Close to the wafer edge, the distortion of the potential intrinsic to the etcher has a greater effect on the ion angular distribution rather than on the ion energy distribution, resulting in a reduction of the radial uniformity of etching.
AB - Two-frequency capacitively coupled plasmas (2f-CCP) are commonly used as a powerful tool for etching of metallic and dielectric materials. Functional separation between two sources, by which independent control of high-density plasma production and high-energy ion injection onto a wafer surface can be realized, will be strongly required for a precise control of the plasma etcher. When increasing the size of the wafer and aiming at high productivity, radial uniformity in the characteristics of Si O2 etching will become a more essential issue to be addressed. The predicted radial uniformity at the wafer interface and the functional separation have been examined numerically by using VicAddress [in Advances in Low Temperature RF plasmas, edited by T. Makabe (Elsevier, Amsterdam, 2002)] in a 2f-CCP etcher in C F4 (5%) Ar at 50 mTorr. This etcher was driven at very high frequency (100 MHz) for the production of high-density plasma and at low frequency (1 MHz) for the bias source. The plasma structure and ion velocity distribution at a wafer interface, which have a direct influence on the property of etching, are mainly discussed. Close to the wafer edge, the distortion of the potential intrinsic to the etcher has a greater effect on the ion angular distribution rather than on the ion energy distribution, resulting in a reduction of the radial uniformity of etching.
UR - http://www.scopus.com/inward/record.url?scp=31144476035&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31144476035&partnerID=8YFLogxK
U2 - 10.1116/1.2040447
DO - 10.1116/1.2040447
M3 - Article
VL - 23
SP - 2212
EP - 2217
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 0734-211X
IS - 5
ER -