Modeling of radial uniformity at a wafer interface in a 2f-CCP for Si O2 etching

T. Yagisawa, T. Shimada, T. Makabe

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Two-frequency capacitively coupled plasmas (2f-CCP) are commonly used as a powerful tool for etching of metallic and dielectric materials. Functional separation between two sources, by which independent control of high-density plasma production and high-energy ion injection onto a wafer surface can be realized, will be strongly required for a precise control of the plasma etcher. When increasing the size of the wafer and aiming at high productivity, radial uniformity in the characteristics of Si O2 etching will become a more essential issue to be addressed. The predicted radial uniformity at the wafer interface and the functional separation have been examined numerically by using VicAddress [in Advances in Low Temperature RF plasmas, edited by T. Makabe (Elsevier, Amsterdam, 2002)] in a 2f-CCP etcher in C F4 (5%) Ar at 50 mTorr. This etcher was driven at very high frequency (100 MHz) for the production of high-density plasma and at low frequency (1 MHz) for the bias source. The plasma structure and ion velocity distribution at a wafer interface, which have a direct influence on the property of etching, are mainly discussed. Close to the wafer edge, the distortion of the potential intrinsic to the etcher has a greater effect on the ion angular distribution rather than on the ion energy distribution, resulting in a reduction of the radial uniformity of etching.

Original languageEnglish
Pages (from-to)2212-2217
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number5
DOIs
Publication statusPublished - 2005

Fingerprint

Etching
etching
wafers
Plasmas
Ions
plasma density
Plasma sources
ion injection
Plasma density
Angular distribution
Velocity distribution
very high frequencies
ions
productivity
Productivity
energy distribution
angular distribution
velocity distribution
low frequencies
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Modeling of radial uniformity at a wafer interface in a 2f-CCP for Si O2 etching. / Yagisawa, T.; Shimada, T.; Makabe, T.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5, 2005, p. 2212-2217.

Research output: Contribution to journalArticle

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