A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Feb 9|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)