Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Ulrich Gösele

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Abstract

A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.

Original languageEnglish
Pages (from-to)876-878
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number6
DOIs
Publication statusPublished - 2004 Feb 9

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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