Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity

Masashi Uematsu; Hiroyuki Kageshima; Yasuo Takahashi; Shigeto Fukatsu; Kohei M. Itoh; Kenji Shiraishi; Ulrich Gösele

doi:10.1063/1.1644623

Modeling of Si self-diffusion in SiO₂: Effect of the Si/SiO₂ interface including time-dependent diffusivity

Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Kenji Shiraishi, Ulrich Gösele

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

A model was constructed in which SiO molecules generated at the interface and diffusing into SiO₂ enhance Si self-diffusion in SiO₂. Based on the model, the diffusion profiles of ion-implanted ³⁰Si in SiO₂ were simulated for various temperatures and SiO₂ thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.

Original language	English
Pages (from-to)	876-878
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	6
DOIs	https://doi.org/10.1063/1.1644623
Publication status	Published - 2004 Feb 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1644623

Cite this

@article{53c81196d48445669b65725315021a93,

title = "Modeling of Si self-diffusion in SiO2: Effect of the Si/SiO2 interface including time-dependent diffusivity",

abstract = "A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.",

author = "Masashi Uematsu and Hiroyuki Kageshima and Yasuo Takahashi and Shigeto Fukatsu and Itoh, {Kohei M.} and Kenji Shiraishi and Ulrich G{\"o}sele",

year = "2004",

month = feb,

day = "9",

doi = "10.1063/1.1644623",

language = "English",

volume = "84",

pages = "876--878",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Modeling of Si self-diffusion in SiO2

T2 - Effect of the Si/SiO2 interface including time-dependent diffusivity

AU - Uematsu, Masashi

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Fukatsu, Shigeto

AU - Itoh, Kohei M.

AU - Shiraishi, Kenji

AU - Gösele, Ulrich

PY - 2004/2/9

Y1 - 2004/2/9

N2 - A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.

AB - A model was constructed in which SiO molecules generated at the interface and diffusing into SiO2 enhance Si self-diffusion in SiO2. Based on the model, the diffusion profiles of ion-implanted 30Si in SiO2 were simulated for various temperatures and SiO2 thickness in a unified manner. In addition, the simulation predicted the possibility of time-dependent diffusivity, which indeed was experimentally observed.

UR - http://www.scopus.com/inward/record.url?scp=1542315180&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542315180&partnerID=8YFLogxK

U2 - 10.1063/1.1644623

DO - 10.1063/1.1644623

M3 - Article

AN - SCOPUS:1542315180

SN - 0003-6951

VL - 84

SP - 876

EP - 878

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Modeling of Si self-diffusion in SiO₂: Effect of the Si/SiO₂ interface including time-dependent diffusivity

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this