Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

D. Matsushita, S. Kuppef, A. Hatayama, A. Fukano, M. Bacal

Research output: Contribution to journalConference article

Abstract

The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

Original languageEnglish
Pages (from-to)38-46
Number of pages9
JournalAIP Conference Proceedings
Volume1097
DOIs
Publication statusPublished - 2009 May 5
Event1st International Symposium on Negative Ions, Beams and Sources - Aix-en-Provence, France
Duration: 2008 Sep 92008 Sep 12

    Fingerprint

Keywords

  • Negative ion source
  • Particle-in-cell modeling
  • Pe bias

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this