Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

D. Matsushita; S. Kuppef; A. Hatayama; A. Fukano; M. Bacal

doi:10.1063/1.3112536

Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

D. Matsushita, S. Kuppef, A. Hatayama, A. Fukano, M. Bacal

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article

Abstract

The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H^- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H^- ion density is discussed.

Original language	English
Pages (from-to)	38-46
Number of pages	9
Journal	AIP Conference Proceedings
Volume	1097
DOIs	https://doi.org/10.1063/1.3112536
Publication status	Published - 2009 May 5
Event	1st International Symposium on Negative Ions, Beams and Sources - Aix-en-Provence, France Duration: 2008 Sep 9 → 2008 Sep 12

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Keywords

Negative ion source
Particle-in-cell modeling
Pe bias

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Matsushita, D., Kuppef, S., Hatayama, A., Fukano, A., & Bacal, M. (2009). Modeling of the plasma electrode bias in the negative ion sources with ID PIC method. AIP Conference Proceedings, 1097, 38-46. https://doi.org/10.1063/1.3112536

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abstract = "The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.",

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AU - Matsushita, D.

AU - Kuppef, S.

AU - Hatayama, A.

AU - Fukano, A.

AU - Bacal, M.

PY - 2009/5/5

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N2 - The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

AB - The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

KW - Negative ion source

KW - Particle-in-cell modeling

KW - Pe bias

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10.1063/1.3112536