Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

D. Matsushita; S. Kuppef; A. Hatayama; A. Fukano; M. Bacal

doi:10.1063/1.3112536

Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

D. Matsushita, S. Kuppef, A. Hatayama, A. Fukano, M. Bacal

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H^- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H^- ion density is discussed.

Original language	English
Pages (from-to)	38-46
Number of pages	9
Journal	AIP Conference Proceedings
Volume	1097
DOIs	https://doi.org/10.1063/1.3112536
Publication status	Published - 2009 May 5
Event	1st International Symposium on Negative Ions, Beams and Sources - Aix-en-Provence, France Duration: 2008 Sep 9 → 2008 Sep 12

Keywords

Negative ion source
Particle-in-cell modeling
Pe bias

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3112536

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title = "Modeling of the plasma electrode bias in the negative ion sources with ID PIC method",

abstract = "The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.",

keywords = "Negative ion source, Particle-in-cell modeling, Pe bias",

author = "D. Matsushita and S. Kuppef and A. Hatayama and A. Fukano and M. Bacal",

year = "2009",

month = may,

day = "5",

doi = "10.1063/1.3112536",

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volume = "1097",

pages = "38--46",

journal = "AIP Conference Proceedings",

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note = "1st International Symposium on Negative Ions, Beams and Sources ; Conference date: 09-09-2008 Through 12-09-2008",

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TY - JOUR

T1 - Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

AU - Matsushita, D.

AU - Kuppef, S.

AU - Hatayama, A.

AU - Fukano, A.

AU - Bacal, M.

PY - 2009/5/5

Y1 - 2009/5/5

N2 - The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

AB - The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.

KW - Negative ion source

KW - Particle-in-cell modeling

KW - Pe bias

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U2 - 10.1063/1.3112536

DO - 10.1063/1.3112536

M3 - Conference article

AN - SCOPUS:65349136385

VL - 1097

SP - 38

EP - 46

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

T2 - 1st International Symposium on Negative Ions, Beams and Sources

Y2 - 9 September 2008 through 12 September 2008

ER -

Modeling of the plasma electrode bias in the negative ion sources with ID PIC method

Abstract

Keywords

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