Abstract
The effect of the plasma electrode bias voltage in the negative ion sources is modeled and investigated with one-dimensional plasma simulation. A particle-in-cell (PIC) method is applied to simulate the motion of charged particles in their self-consistent electric field. In the simulation, the electron current density is fixed to produce the bias voltage. The tendency of current-voltage characteristics obtained in the simulation show agreement with the one obtained from a simple probe theory. In addition, the H- ion density peak appears at the bias voltage close to the plasma potential as observed in the experiment. The physical mechanism of this peak H- ion density is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 38-46 |
| Number of pages | 9 |
| Journal | AIP Conference Proceedings |
| Volume | 1097 |
| DOIs | |
| Publication status | Published - 2009 May 5 |
| Event | 1st International Symposium on Negative Ions, Beams and Sources - Aix-en-Provence, France Duration: 2008 Sep 9 → 2008 Sep 12 |
Keywords
- Negative ion source
- Particle-in-cell modeling
- Pe bias
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Matsushita, D., Kuppef, S., Hatayama, A., Fukano, A., & Bacal, M. (2009). Modeling of the plasma electrode bias in the negative ion sources with ID PIC method. AIP Conference Proceedings, 1097, 38-46. https://doi.org/10.1063/1.3112536