Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima, Kenji Adachi, Hiroaki Imai

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared afterAr+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume346
DOIs
Publication statusPublished - 1994 Jan 1
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 8

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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