Modification of sol-gel thin films by ion implantation

Hiroshi Hirashima, Kenji Adachi, Hiroaki Imai

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the 1R absorption band of OH disappeared after Ar+ implantation. Dehydration and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed by B+ implantation. However, IR absorption bands attributed to B-0 bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Original languageEnglish
Pages (from-to)33-40
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2288
DOIs
Publication statusPublished - 1994 Oct 13
EventSol-Gel Optics III 1994 - San Diego, United States
Duration: 1994 Jul 241994 Jul 29

Keywords

  • Ion implantation
  • IR absorption
  • Refractive index
  • Sol-gel
  • Thin film
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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