Molecular beam epitaxial growth of CuGaSe2 films

A. Yamada, P. J. Makita, S. Niki, P. J. Fons, A. Obara

Research output: Contribution to journalArticle

Abstract

Cu-Ga-Se films of various compositions were prepared by MBE technique. The films were examined by reflection high energy electron diffraction, electron probe for micro analysis, X-ray diffraction and photoluminescence. The valence stoichiometry of the films is fulfilled at unity molecularity, showing that CuGaSe2 is possible to be grown by MBE. The stoichiometry is almost conserved in a wide range of molecularity of the films. The films have chalcopyrite structure over a remarkably wide range of Cu-rich composition. They grow epitaxially on [001] oriented GaAs substrates with the c-axis perpendicular to the substrate surface. The low temperature photoluminescence from epitaxially grown films of nearly stoichiometric and Cu-rich composition show sharp emissions peaked at 1.71eV attributable to exciton recombination indicating high quality of the films.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalDenshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume60
Issue number3
Publication statusPublished - 1996 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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