Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

M. Kitabatake, P. Fons, J. E. Greene

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.

Original languageEnglish
Pages (from-to)870-875
Number of pages6
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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