TY - JOUR
T1 - Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE
AU - Kitabatake, M.
AU - Fons, P.
AU - Greene, J. E.
N1 - Funding Information:
The authors gratefully acknowledge the financial assistance of the Joint Services Electronics Program, the Semiconductor Research Corporation, the National Center for Supercomputing Applications, and the Space Vacuum Epitaxy Center funded by NASA.
PY - 1991/5/2
Y1 - 1991/5/2
N2 - Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.
AB - Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.
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U2 - 10.1016/0022-0248(91)91099-V
DO - 10.1016/0022-0248(91)91099-V
M3 - Article
AN - SCOPUS:0026413245
VL - 111
SP - 870
EP - 875
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -