Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

M. Kitabatake; P. Fons; J. E. Greene

doi:10.1016/0022-0248(91)91099-V

Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

M. Kitabatake, P. Fons, J. E. Greene

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.

Original language	English
Pages (from-to)	870-875
Number of pages	6
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91099-V
Publication status	Published - 1991 May 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE. / Kitabatake, M.; Fons, P.; Greene, J. E.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 870-875.

Research output: Contribution to journal › Article › peer-review

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abstract = "Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.",

author = "M. Kitabatake and P. Fons and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial assistance of the Joint Services Electronics Program, the Semiconductor Research Corporation, the National Center for Supercomputing Applications, and the Space Vacuum Epitaxy Center funded by NASA.",

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AU - Kitabatake, M.

AU - Fons, P.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial assistance of the Joint Services Electronics Program, the Semiconductor Research Corporation, the National Center for Supercomputing Applications, and the Space Vacuum Epitaxy Center funded by NASA.

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N2 - Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.

AB - Molecular dynamics and quasidynamics simulations, utilizing the Tersoff many-body potential, have been used to investigate ion/surface interaction kinetics and mechanisms, including defect formation and annihilation, associated with the use of low-energy ion irradiation during Si film growth by MBE to decrease epitaxial temperatures and increase dopant incorporation probabilities. The irradiation events were initiated at an array of points in the primitive unit cell of 2 × 1 terminated Si(001) lattice.

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Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE

Abstract

ASJC Scopus subject areas

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