MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET.

Yuji Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A Monte Carlo particle simulation of a 0. 25 mu m-long gate (and 0. 25 mu m-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of g//m and I//d//s//s of mS/mm and 5. 35 ma/20 mu m were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.

Original languageEnglish
Pages (from-to)20-21
Number of pages2
JournalElectronics Letters
Volume19
Issue number1
Publication statusPublished - 1983 Jan 6
Externally publishedYes

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Ballistics
Field effect transistors
Doping (additives)
Substrates
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Awano, Y., Tomizawa, K., Hashizume, N., & Kawashima, M. (1983). MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET. Electronics Letters, 19(1), 20-21.

MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET. / Awano, Yuji; Tomizawa, K.; Hashizume, N.; Kawashima, M.

In: Electronics Letters, Vol. 19, No. 1, 06.01.1983, p. 20-21.

Research output: Contribution to journalArticle

Awano, Y, Tomizawa, K, Hashizume, N & Kawashima, M 1983, 'MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET.', Electronics Letters, vol. 19, no. 1, pp. 20-21.
Awano Y, Tomizawa K, Hashizume N, Kawashima M. MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET. Electronics Letters. 1983 Jan 6;19(1):20-21.
Awano, Yuji ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M. / MONTE CARLO PARTICLE SIMULATION OF A GaAs SHORT-CHANNEL MESFET. In: Electronics Letters. 1983 ; Vol. 19, No. 1. pp. 20-21.
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