Monte Carlo particle simulation of a GaAs short-channel MESFET

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

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Abstract

A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.

Original languageEnglish
Pages (from-to)20-21
Number of pages2
JournalElectronics Letters
Volume19
Issue number1
DOIs
Publication statusPublished - 1983 Jan 6

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Keywords

  • Field-effect devices
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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