MONTE CARLO PARTICLE SIMULATION OF GaAs SUBMICRON n** plus -i-n** plus DIODE.

Yuji Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Monte Carlo particle simulation of a GaAs submicron n** plus -i-n** plus diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0. 36 ev. A maximum electron velocity of 1 multiplied by 10**8 cm s** minus **1 was observed at certain conditions. Effects of electron backscattering from the anode n** plus -layer are discussed.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalElectronics Letters
Volume18
Issue number3
Publication statusPublished - 1982 Feb 4
Externally publishedYes

Fingerprint

Electrons
Diodes
Backscattering
Ballistics
Anodes
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Awano, Y., Tomizawa, K., Hashizume, N., & Kawashima, M. (1982). MONTE CARLO PARTICLE SIMULATION OF GaAs SUBMICRON n** plus -i-n** plus DIODE. Electronics Letters, 18(3), 133-135.

MONTE CARLO PARTICLE SIMULATION OF GaAs SUBMICRON n** plus -i-n** plus DIODE. / Awano, Yuji; Tomizawa, K.; Hashizume, N.; Kawashima, M.

In: Electronics Letters, Vol. 18, No. 3, 04.02.1982, p. 133-135.

Research output: Contribution to journalArticle

Awano, Y, Tomizawa, K, Hashizume, N & Kawashima, M 1982, 'MONTE CARLO PARTICLE SIMULATION OF GaAs SUBMICRON n** plus -i-n** plus DIODE.', Electronics Letters, vol. 18, no. 3, pp. 133-135.
Awano, Yuji ; Tomizawa, K. ; Hashizume, N. ; Kawashima, M. / MONTE CARLO PARTICLE SIMULATION OF GaAs SUBMICRON n** plus -i-n** plus DIODE. In: Electronics Letters. 1982 ; Vol. 18, No. 3. pp. 133-135.
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