Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 108 cms-1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.

Original languageEnglish
Pages (from-to)133-135
Number of pages3
JournalElectronics Letters
Volume18
Issue number3
DOIs
Publication statusPublished - 1982 Feb 4
Externally publishedYes

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Keywords

  • Diodes
  • Monte Carlo methods
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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