Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

Y. Awano; K. Tomizawa; N. Hashizume; M. Kawashima

doi:10.1049/el:19820089

Monte Carlo particle simulation of GaAs submicron n⁺-i-n⁺ diode

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Monte Carlo particle simulation of a GaAs submicron n⁺-i-n⁺ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 10⁸ cms^-1 was observed at certain conditions. Effects of the electron backscattering from the anode n⁺-layer are also discussed.

Original language	English
Pages (from-to)	133-135
Number of pages	3
Journal	Electronics Letters
Volume	18
Issue number	3
DOIs	https://doi.org/10.1049/el:19820089
Publication status	Published - 1982 Feb 4
Externally published	Yes

Keywords

Diodes
Monte Carlo methods
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19820089

Cite this

@article{66b737cbd7d3454d90b525a93ae6f5c8,

title = "Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode",

abstract = "Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 108 cms-1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.",

keywords = "Diodes, Monte Carlo methods, Semiconductor devices and materials",

author = "Y. Awano and K. Tomizawa and N. Hashizume and M. Kawashima",

year = "1982",

month = feb,

day = "4",

doi = "10.1049/el:19820089",

language = "English",

volume = "18",

pages = "133--135",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "3",

}

TY - JOUR

T1 - Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode

AU - Awano, Y.

AU - Tomizawa, K.

AU - Hashizume, N.

AU - Kawashima, M.

PY - 1982/2/4

Y1 - 1982/2/4

N2 - Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 108 cms-1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.

AB - Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 108 cms-1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.

KW - Diodes

KW - Monte Carlo methods

KW - Semiconductor devices and materials

UR - http://www.scopus.com/inward/record.url?scp=0020474491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020474491&partnerID=8YFLogxK

U2 - 10.1049/el:19820089

DO - 10.1049/el:19820089

M3 - Article

AN - SCOPUS:0020474491

SN - 0013-5194

VL - 18

SP - 133

EP - 135

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -