Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0-36 eV. A maximum electron velocity of 1 × 108 cms-1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.
- Monte Carlo methods
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering