Monte Carlo simulation of 50 nm devices with Schottky contact model

K. Matsuzawa, K. Uchida, A. Nishiyama

    Research output: Contribution to conferencePaper

    6 Citations (Scopus)

    Abstract

    A Schottky contact model was implemented as a boundary condition for a Monte Carlo device simulation. Unlike the ideal ohmic contact, thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region of high impurity concentration around contacts is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example of the present boundary condition, we simulated the transport in n+nn+ structures with sub-0.1 μm channel length. We found direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 μm devices.

    Original languageEnglish
    Pages35-38
    Number of pages4
    Publication statusPublished - 1999 Dec 1
    EventProceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) - Kyoto, Jpn
    Duration: 1999 Sep 61999 Sep 8

    Other

    OtherProceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99)
    CityKyoto, Jpn
    Period99/9/699/9/8

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Matsuzawa, K., Uchida, K., & Nishiyama, A. (1999). Monte Carlo simulation of 50 nm devices with Schottky contact model. 35-38. Paper presented at Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99), Kyoto, Jpn, .