Monte Carlo simulation of 50 nm devices with Schottky contact model

K. Matsuzawa, Ken Uchida, A. Nishiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A Schottky contact model was implemented as a boundary condition for a Monte Carlo device simulation. Unlike the ideal ohmic contact, thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region of high impurity concentration around contacts is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example of the present boundary condition, we simulated the transport in n+nn+ structures with sub-0.1 μm channel length. We found direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 μm devices.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherIEEE
Pages35-38
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99) - Kyoto, Jpn
Duration: 1999 Sep 61999 Sep 8

Other

OtherProceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99)
CityKyoto, Jpn
Period99/9/699/9/8

Fingerprint

Boundary conditions
Schottky barrier diodes
Ohmic contacts
Hydrodynamics
Impurities
Electrons
Monte Carlo simulation
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Matsuzawa, K., Uchida, K., & Nishiyama, A. (1999). Monte Carlo simulation of 50 nm devices with Schottky contact model. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 35-38). IEEE.

Monte Carlo simulation of 50 nm devices with Schottky contact model. / Matsuzawa, K.; Uchida, Ken; Nishiyama, A.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. IEEE, 1999. p. 35-38.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsuzawa, K, Uchida, K & Nishiyama, A 1999, Monte Carlo simulation of 50 nm devices with Schottky contact model. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. IEEE, pp. 35-38, Proceedings of the 1999 International Conference on Simulation of Semicondutor Processes and Devices (SISPAD'99), Kyoto, Jpn, 99/9/6.
Matsuzawa K, Uchida K, Nishiyama A. Monte Carlo simulation of 50 nm devices with Schottky contact model. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. IEEE. 1999. p. 35-38
Matsuzawa, K. ; Uchida, Ken ; Nishiyama, A. / Monte Carlo simulation of 50 nm devices with Schottky contact model. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. IEEE, 1999. pp. 35-38
@inproceedings{09cb4b20a95c4173a707c0d2b7d9be90,
title = "Monte Carlo simulation of 50 nm devices with Schottky contact model",
abstract = "A Schottky contact model was implemented as a boundary condition for a Monte Carlo device simulation. Unlike the ideal ohmic contact, thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region of high impurity concentration around contacts is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example of the present boundary condition, we simulated the transport in n+nn+ structures with sub-0.1 μm channel length. We found direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 μm devices.",
author = "K. Matsuzawa and Ken Uchida and A. Nishiyama",
year = "1999",
language = "English",
pages = "35--38",
booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "IEEE",

}

TY - GEN

T1 - Monte Carlo simulation of 50 nm devices with Schottky contact model

AU - Matsuzawa, K.

AU - Uchida, Ken

AU - Nishiyama, A.

PY - 1999

Y1 - 1999

N2 - A Schottky contact model was implemented as a boundary condition for a Monte Carlo device simulation. Unlike the ideal ohmic contact, thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region of high impurity concentration around contacts is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example of the present boundary condition, we simulated the transport in n+nn+ structures with sub-0.1 μm channel length. We found direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 μm devices.

AB - A Schottky contact model was implemented as a boundary condition for a Monte Carlo device simulation. Unlike the ideal ohmic contact, thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region of high impurity concentration around contacts is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example of the present boundary condition, we simulated the transport in n+nn+ structures with sub-0.1 μm channel length. We found direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1 μm devices.

UR - http://www.scopus.com/inward/record.url?scp=0033283536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033283536&partnerID=8YFLogxK

M3 - Conference contribution

SP - 35

EP - 38

BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

PB - IEEE

ER -