Monte Carlo Simulation of AlGaAs/GaAs Hetero junction Bipolar Transistors

K. Tomizawa, Y. Awano, K. Tomizawa, Y. Awano, N. Hashizume

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    52 Citations (Scopus)

    Abstract

    A first demonstration of one-dimensional Monte Carlo simulations of AlGaAs/GaAs heterojunction bipolar transistors is reported. The electron motion is solved by a particle model, while the hole motion is solved by a conventional hydrodynamic model. It is shown that the compositional grading of AlxGa1-xAs in the base region is effective to cause the ballistic acceleration of electrons in the base region, resulting in a high collector current density of above 1 mA/µm2. The current-gain cutoff frequency fT reaches 150 GHz if the size of a transistor is properly designed. Also shown is the relation between the device performances and the electron dynamics investigated.

    Original languageEnglish
    Pages (from-to)362-364
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume5
    Issue number9
    DOIs
    Publication statusPublished - 1984 Sep

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Tomizawa, K., Awano, Y., Tomizawa, K., Awano, Y., & Hashizume, N. (1984). Monte Carlo Simulation of AlGaAs/GaAs Hetero junction Bipolar Transistors. IEEE Electron Device Letters, 5(9), 362-364. https://doi.org/10.1109/EDL.1984.25947