Monte Carlo Simulation of AlGaAs/GaAs Hetero junction Bipolar Transistors

K. Tomizawa, Y. Awano, K. Tomizawa, Y. Awano, N. Hashizume

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Abstract

A first demonstration of one-dimensional Monte Carlo simulations of AlGaAs/GaAs heterojunction bipolar transistors is reported. The electron motion is solved by a particle model, while the hole motion is solved by a conventional hydrodynamic model. It is shown that the compositional grading of AlxGa1-xAs in the base region is effective to cause the ballistic acceleration of electrons in the base region, resulting in a high collector current density of above 1 mA/µm2. The current-gain cutoff frequency fT reaches 150 GHz if the size of a transistor is properly designed. Also shown is the relation between the device performances and the electron dynamics investigated.

Original languageEnglish
Pages (from-to)362-364
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number9
DOIs
Publication statusPublished - 1984 Sep

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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