MONTE CARLO SIMULATION OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS.

K. Tomizawa, Yuji Awano, N. Hashizume

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

A first demonstration of one-dimensional Monte Carlo simulations of AlGaAs/GaAs heterojunction bipolar transistors is reported. The electron motion is solved by a particle model, while the hole motion is solved by a conventional hydrodynamic model. It is shown that the compositional grading of Al//xGa//1// minus //xAs in the base region is effective to cause the ballistic acceleration of electrons in the base region, resulting in a high collector current density of above 1 mA/ mu m**2. The current-gain cutoff frequency fT reaches 150 GHz if the size of a transistor is properly designed. Also shown is the relation between the device performances and the electron dynamics investigated.

Original languageEnglish
Pages (from-to)362-364
Number of pages3
JournalElectron device letters
VolumeEDL-5
Issue number9
Publication statusPublished - 1984 Sep
Externally publishedYes

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Heterojunction bipolar transistors
Electrons
Cutoff frequency
Ballistics
Transistors
Current density
Demonstrations
Hydrodynamics
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

MONTE CARLO SIMULATION OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS. / Tomizawa, K.; Awano, Yuji; Hashizume, N.

In: Electron device letters, Vol. EDL-5, No. 9, 09.1984, p. 362-364.

Research output: Contribution to journalArticle

Tomizawa, K. ; Awano, Yuji ; Hashizume, N. / MONTE CARLO SIMULATION OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS. In: Electron device letters. 1984 ; Vol. EDL-5, No. 9. pp. 362-364.
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