MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE.

K. Tomizawa, Yuji Awano, N. Hashizume, F. Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.

Original languageEnglish
Pages (from-to)1067-1069
Number of pages3
JournalElectronics Letters
Volume18
Issue number25-26
Publication statusPublished - 1982 Dec 9
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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