MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE.

K. Tomizawa, Yuji Awano, N. Hashizume, F. Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.

Original languageEnglish
Pages (from-to)1067-1069
Number of pages3
JournalElectronics Letters
Volume18
Issue number25-26
Publication statusPublished - 1982 Dec 9
Externally publishedYes

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Heterojunctions
Cathodes
Electron injection
Electrons
Hot electrons
Diodes
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE. / Tomizawa, K.; Awano, Yuji; Hashizume, N.; Suzuki, F.

In: Electronics Letters, Vol. 18, No. 25-26, 09.12.1982, p. 1067-1069.

Research output: Contribution to journalArticle

Tomizawa, K. ; Awano, Yuji ; Hashizume, N. ; Suzuki, F. / MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE. In: Electronics Letters. 1982 ; Vol. 18, No. 25-26. pp. 1067-1069.
@article{790472e535924be9bceced186c736e73,
title = "MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE.",
abstract = "A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.",
author = "K. Tomizawa and Yuji Awano and N. Hashizume and F. Suzuki",
year = "1982",
month = "12",
day = "9",
language = "English",
volume = "18",
pages = "1067--1069",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "25-26",

}

TY - JOUR

T1 - MONTE CARLO SIMULATION OF GaAs SUBMICRON n** plus -n-n** plus DIODE WITH GaAlAs HETEROJUNCTION CATHODE.

AU - Tomizawa, K.

AU - Awano, Yuji

AU - Hashizume, N.

AU - Suzuki, F.

PY - 1982/12/9

Y1 - 1982/12/9

N2 - A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.

AB - A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.

UR - http://www.scopus.com/inward/record.url?scp=0020478373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020478373&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020478373

VL - 18

SP - 1067

EP - 1069

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25-26

ER -