A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga//1// minus //xAl//xAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.
|Number of pages||3|
|Publication status||Published - 1982 Dec 9|
ASJC Scopus subject areas
- Electrical and Electronic Engineering