A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.
- Electron mobility
- Monte Carlo methods
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering