Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode

K. Tomizawa, Y. Awano, N. Hashizume, F. Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1-xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heteroj unction cathode is effective to increase the mean electron velocity of carriers.

Original languageEnglish
Pages (from-to)1067-1069
Number of pages3
JournalElectronics Letters
Volume18
DOIs
Publication statusPublished - 1982 Dec 9
Externally publishedYes

Keywords

  • Electron mobility
  • Monte Carlo methods
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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