Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

Luis Jou García; Yoko Kawamura; Masashi Uematsu; Jess M. Hernndez-Mangas; Kohei M. Itoh

doi:10.1063/1.3592256

Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

Luis Jou García, Yoko Kawamura, Masashi Uematsu, Jess M. Hernndez-Mangas, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The amorphization of silicon due to atomic displacement during ion implantation has been simulated. A model based on Monte Carlo calculation reproduces very well the depth profile of atomic mixing and displacement length of host silicon atoms reported by previous experiments. The critical displacement in the depth direction for amorphization has been determined to be 5 Å. This average threshold value is shown to be universal for identification of amorphous regions in silicon for a wide range of implantation conditions involving different doping species, acceleration energies, and doses.

Original language	English
Article number	123507
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3592256
Publication status	Published - 2011 Jun 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3592256

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title = "Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation",

abstract = "The amorphization of silicon due to atomic displacement during ion implantation has been simulated. A model based on Monte Carlo calculation reproduces very well the depth profile of atomic mixing and displacement length of host silicon atoms reported by previous experiments. The critical displacement in the depth direction for amorphization has been determined to be 5 {\AA}. This average threshold value is shown to be universal for identification of amorphous regions in silicon for a wide range of implantation conditions involving different doping species, acceleration energies, and doses.",

author = "Garc{\'i}a, {Luis Jou} and Yoko Kawamura and Masashi Uematsu and Hernndez-Mangas, {Jess M.} and Itoh, {Kohei M.}",

note = "Funding Information: We gratefully acknowledge P. Castrillo of U. Valladolid, S. Ito of Selete Inc., Y. Shimizu of Tohoku University, and T. Sekiguchi of Keio for fruitful discussions. This work was supported in part by Selete Inc., in part by Grant-in-Aid for Scientific Research by MEXT, in part by Special Coordination Funds for Promoting Science and Technology, and in part by Keio G-COE program.",

year = "2011",

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doi = "10.1063/1.3592256",

language = "English",

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T1 - Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

AU - García, Luis Jou

AU - Kawamura, Yoko

AU - Uematsu, Masashi

AU - Hernndez-Mangas, Jess M.

AU - Itoh, Kohei M.

N1 - Funding Information: We gratefully acknowledge P. Castrillo of U. Valladolid, S. Ito of Selete Inc., Y. Shimizu of Tohoku University, and T. Sekiguchi of Keio for fruitful discussions. This work was supported in part by Selete Inc., in part by Grant-in-Aid for Scientific Research by MEXT, in part by Special Coordination Funds for Promoting Science and Technology, and in part by Keio G-COE program.

PY - 2011/6/15

Y1 - 2011/6/15

N2 - The amorphization of silicon due to atomic displacement during ion implantation has been simulated. A model based on Monte Carlo calculation reproduces very well the depth profile of atomic mixing and displacement length of host silicon atoms reported by previous experiments. The critical displacement in the depth direction for amorphization has been determined to be 5 Å. This average threshold value is shown to be universal for identification of amorphous regions in silicon for a wide range of implantation conditions involving different doping species, acceleration energies, and doses.

AB - The amorphization of silicon due to atomic displacement during ion implantation has been simulated. A model based on Monte Carlo calculation reproduces very well the depth profile of atomic mixing and displacement length of host silicon atoms reported by previous experiments. The critical displacement in the depth direction for amorphization has been determined to be 5 Å. This average threshold value is shown to be universal for identification of amorphous regions in silicon for a wide range of implantation conditions involving different doping species, acceleration energies, and doses.

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Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

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