Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation

Luis Jou García, Yoko Kawamura, Masashi Uematsu, Jess M. Hernndez-Mangas, Kohei M Itoh

Research output: Contribution to journalArticle

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Abstract

The amorphization of silicon due to atomic displacement during ion implantation has been simulated. A model based on Monte Carlo calculation reproduces very well the depth profile of atomic mixing and displacement length of host silicon atoms reported by previous experiments. The critical displacement in the depth direction for amorphization has been determined to be 5 Å. This average threshold value is shown to be universal for identification of amorphous regions in silicon for a wide range of implantation conditions involving different doping species, acceleration energies, and doses.

Original languageEnglish
Article number123507
JournalJournal of Applied Physics
Volume109
Issue number12
DOIs
Publication statusPublished - 2011 Jun 15

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ion implantation
silicon
simulation
implantation
dosage
thresholds
profiles
atoms
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation. / García, Luis Jou; Kawamura, Yoko; Uematsu, Masashi; Hernndez-Mangas, Jess M.; Itoh, Kohei M.

In: Journal of Applied Physics, Vol. 109, No. 12, 123507, 15.06.2011.

Research output: Contribution to journalArticle

García, Luis Jou ; Kawamura, Yoko ; Uematsu, Masashi ; Hernndez-Mangas, Jess M. ; Itoh, Kohei M. / Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 12.
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