MONTE CARLO SIMULATION OF SUBMICRON GaAs n** plus -i(n)-n** plus DIODE.

K. Tomizawa, Yuji Awano, N. Hashizume, M. Kawashima

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Monte Carlo simulation of electron transport in a GaAs diode, of n** plus -i(n)-n** plus structure, with a 0. 25 mu m- or 0. 5 mu m-long active layer is described. The anode voltage ranges from 0. 25 to 1. 0 v. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potenital, and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0. 25 mu m-long diode and the importance of the back-scattering of electrons from the anode n** plus -layer are discussed. The effects of the lattice temperature and doping on the length of the active layer, and a comparison with a Si diode are considered.

Original languageEnglish
Pages (from-to)131-136
Number of pages6
JournalIEE Proceedings I: Solid State and Electron Devices
Volume129
Issue number4
Publication statusPublished - 1982 Aug
Externally publishedYes

Fingerprint

Diodes
Electrons
Anodes
Ballistics
Carrier concentration
Electric fields
Doping (additives)
Scattering
Monte Carlo simulation
Electric potential
Temperature
Electron Transport

ASJC Scopus subject areas

  • Engineering(all)

Cite this

MONTE CARLO SIMULATION OF SUBMICRON GaAs n** plus -i(n)-n** plus DIODE. / Tomizawa, K.; Awano, Yuji; Hashizume, N.; Kawashima, M.

In: IEE Proceedings I: Solid State and Electron Devices, Vol. 129, No. 4, 08.1982, p. 131-136.

Research output: Contribution to journalArticle

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