Monte Carlo simulations of electron transport in In0.52Al 0.48As/In0.75Ga0.25as high electron mobility transistors at 300 and 16K

Akira Endoh, Issei Watanabe, Keisuke Shinohara, Yuji Awano, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura

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