Monte Carlo study of anisotropic hole velocity overshoot in sub-0.1 μm GaAs devices for complementary circuit applications

Yukio Tagawa, Yuji Awano, Naoki Yokoyama

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

In order to evaluate the high-speed and low-power performance of sub-0.1 μm-sized GaAs devices used for complementary circuits, we studied full-band Monte Carlo simulations of high field hole transport in bulk GaAs and one-dimensional p-i-p diodes. We found that the peak hole velocity under an electric field of 100 kV/cm reaches 2.2×107 cm/sec at room temperature, which is about three times higher than the steady-state drift velocity. We also simulated anisotropic hole velocity overshoot effects and demonstrated that the peak velocity with an electric field applied along the 〈100〉 direction is about 30% higher than in other directions, although the saturation velocities are almost the same. In this paper, we discuss the hole velocity overshoot affect on the characteristics of a nanometer-sized device, and present a similar anisotropic dependence on the current drivability of 0.05 μm p-i-p diodes.

Original languageEnglish
Pages297-303
Number of pages7
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1997 Aug 41997 Aug 6

Other

OtherProceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period97/8/497/8/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Tagawa, Y., Awano, Y., & Yokoyama, N. (1997). Monte Carlo study of anisotropic hole velocity overshoot in sub-0.1 μm GaAs devices for complementary circuit applications. 297-303. Paper presented at Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .