Abstract
In order to evaluate the high-speed and low-power performance of sub-0.1 μm-sized GaAs devices used for complementary circuits, we studied full-band Monte Carlo simulations of high field hole transport in bulk GaAs and one-dimensional p-i-p diodes. We found that the peak hole velocity under an electric field of 100 kV/cm reaches 2.2×107 cm/sec at room temperature, which is about three times higher than the steady-state drift velocity. We also simulated anisotropic hole velocity overshoot effects and demonstrated that the peak velocity with an electric field applied along the 〈100〉 direction is about 30% higher than in other directions, although the saturation velocities are almost the same. In this paper, we discuss the hole velocity overshoot affect on the characteristics of a nanometer-sized device, and present a similar anisotropic dependence on the current drivability of 0.05 μm p-i-p diodes.
Original language | English |
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Pages | 297-303 |
Number of pages | 7 |
Publication status | Published - 1997 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: 1997 Aug 4 → 1997 Aug 6 |
Other
Other | Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits |
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City | Ithaca, NY, USA |
Period | 97/8/4 → 97/8/6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering