Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits

Yuji Awano, Yukio Tagawa, Masashi Shima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

Original languageEnglish
Title of host publicationProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
PublisherIEEE
Pages408-414
Number of pages7
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1995 Aug 71995 Aug 9

Other

OtherProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period95/8/795/8/9

Fingerprint

Electron devices
Electrons
Networks (circuits)
Electric fields
Scattering
Silicon
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Awano, Y., Tagawa, Y., & Shima, M. (1995). Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. In Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 408-414). IEEE.

Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. / Awano, Yuji; Tagawa, Yukio; Shima, Masashi.

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, 1995. p. 408-414.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Awano, Y, Tagawa, Y & Shima, M 1995, Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. in Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, pp. 408-414, Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 95/8/7.
Awano Y, Tagawa Y, Shima M. Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. In Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE. 1995. p. 408-414
Awano, Yuji ; Tagawa, Yukio ; Shima, Masashi. / Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. IEEE, 1995. pp. 408-414
@inproceedings{5dd1c01489ec4238aff9cb2cbdfb8ba7,
title = "Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits",
abstract = "In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.",
author = "Yuji Awano and Yukio Tagawa and Masashi Shima",
year = "1995",
language = "English",
pages = "408--414",
booktitle = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",
publisher = "IEEE",

}

TY - GEN

T1 - Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits

AU - Awano, Yuji

AU - Tagawa, Yukio

AU - Shima, Masashi

PY - 1995

Y1 - 1995

N2 - In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

AB - In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

UR - http://www.scopus.com/inward/record.url?scp=0029545637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029545637&partnerID=8YFLogxK

M3 - Conference contribution

SP - 408

EP - 414

BT - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

PB - IEEE

ER -