Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits

Yuji Awano, Yukio Tagawa, Masashi Shima

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 μm devices show that, under the electric field of 100 KV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.

Original languageEnglish
Pages408-414
Number of pages7
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: 1995 Aug 71995 Aug 9

Other

OtherProceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period95/8/795/8/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Awano, Y., Tagawa, Y., & Shima, M. (1995). Monte Carlo study of electron and hole transport for high-speed and low-power sub-0.1 μm GaAs circuits. 408-414. Paper presented at Proceedings of the 1995 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .