More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Pages707-710
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

Other

Other2007 IEEE International Electron Devices Meeting, IEDM
CountryUnited States
CityWashington, DC
Period07/12/1007/12/12

Fingerprint

Hole mobility
Field effect transistors
Carrier concentration

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, S., Saitoh, M., & Uchida, K. (2007). More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 707-710). [4419044] https://doi.org/10.1109/IEDM.2007.4419044

More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. / Kobayashi, Shigeki; Saitoh, Masumi; Uchida, Ken.

Technical Digest - International Electron Devices Meeting, IEDM. 2007. p. 707-710 4419044.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, S, Saitoh, M & Uchida, K 2007, More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. in Technical Digest - International Electron Devices Meeting, IEDM., 4419044, pp. 707-710, 2007 IEEE International Electron Devices Meeting, IEDM, Washington, DC, United States, 07/12/10. https://doi.org/10.1109/IEDM.2007.4419044
Kobayashi, Shigeki ; Saitoh, Masumi ; Uchida, Ken. / More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. Technical Digest - International Electron Devices Meeting, IEDM. 2007. pp. 707-710
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