Abstract
Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting, IEDM |
| Pages | 707-710 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
| Event | 2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12 |
Other
| Other | 2007 IEEE International Electron Devices Meeting, IEDM |
|---|---|
| Country | United States |
| City | Washington, DC |
| Period | 07/12/10 → 07/12/12 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. / Kobayashi, Shigeki; Saitoh, Masumi; Uchida, Ken.
Technical Digest - International Electron Devices Meeting, IEDM. 2007. p. 707-710 4419044.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering
AU - Kobayashi, Shigeki
AU - Saitoh, Masumi
AU - Uchida, Ken
PY - 2007
Y1 - 2007
N2 - Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.
AB - Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.
UR - http://www.scopus.com/inward/record.url?scp=50249181142&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249181142&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2007.4419044
DO - 10.1109/IEDM.2007.4419044
M3 - Conference contribution
SP - 707
EP - 710
BT - Technical Digest - International Electron Devices Meeting, IEDM
ER -