Abstract
Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.
Original language | English |
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Article number | 4419044 |
Pages (from-to) | 707-710 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
DOIs | |
Publication status | Published - 2007 Dec 1 |
Event | 2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry