More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

Research output: Contribution to journalConference article

Abstract

Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.

Original languageEnglish
Article number4419044
Pages (from-to)707-710
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2007 Dec 1
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 2007 Dec 102007 Dec 12

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this