More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi; Masumi Saitoh; Ken Uchida

doi:10.1109/IEDM.2007.4419044

More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Shigeki Kobayashi, Masumi Saitoh, Ken Uchida

Research output: Contribution to journal › Conference article

13 Citations (Scopus)

Abstract

Hole mobility (μ_h) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (T_SOI) is investigated. It is found μ_h in DG mode (μ_DG) is greatly enhanced in all the measured T_SOI in comparison with single gate mode. μ_DG of sub-10nm T_SOI exceeds even the universal mobility at high surface carrier densities. The higher μ_DG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μ_DG is further enhanced by uniaxial stress.

Original language	English
Article number	4419044
Pages (from-to)	707-710
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419044
Publication status	Published - 2007 Dec 1
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Kobayashi, S., Saitoh, M., & Uchida, K. (2007). More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering. Technical Digest - International Electron Devices Meeting, IEDM, 707-710. [4419044]. https://doi.org/10.1109/IEDM.2007.4419044

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abstract = "Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.",

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AB - Hole mobility (μh) enhancement by double gate (DG) mode in (001)/〈110〉 ultrathin-body SOI pFETs with sub-iOnm SOI thickness (TSOI) is investigated. It is found μh in DG mode (μDG) is greatly enhanced in all the measured TSOI in comparison with single gate mode. μDG of sub-10nm TSOI exceeds even the universal mobility at high surface carrier densities. The higher μDG is attributed to average effective mass reduction due to a population increase in the light hole band. Subband calculations confirm this model. It is also demonstrated that higher μDG is further enhanced by uniaxial stress.

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