More-than-universal mobility in double-gate SOI p-FETs with sub-10-nm body thickness - Role of light-hole band and compatibility with uniaxial stress engineering

Chemical Compounds

• Subband 87%
• Effective Mass 85%
• Hole Mobility 71%
• Compound Mobility 46%
• Reduction 27%
• Surface 19%

Engineering & Materials Science

• Hole mobility 100%
• Carrier concentration 85%
• Field effect transistors 64%

Physics & Astronomy

• SOI (semiconductors) 66%
• compatibility 60%
• field effect transistors 47%
• engineering 44%
• hole mobility 9%
• augmentation 5%