Multi-back-gate control of carbon nanotube double-quantum dot

Hideyuki Maki, Tomoyuki Mizuno, Satoru Suzuki, Tetsuya Sato, Yoshihiro Kobayashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have fabricated single-walled carbon nanotube (SWNT) quantum dot device with local multi-back gates, in which a SWNT is not surrounded by an insulator or gate electrodes. The charge states of multi-quantum dots, which are separated by an intrinsic defect of a SWNT, can be independently controlled by applying two local back gates. The charge stability diagram changes depending on the gate voltage range, which changes the interdot coupling between two dots. Furthermore, a honeycomb charge stability diagram corresponding to an intermediately coupled double-quantum dot is also observed.

Original languageEnglish
Article number04C201
JournalJapanese Journal of Applied Physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr

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Single-walled carbon nanotubes (SWCN)
Semiconductor quantum dots
Carbon nanotubes
carbon nanotubes
quantum dots
diagrams
Defects
Electrodes
insulators
Electric potential
electrodes
defects
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Multi-back-gate control of carbon nanotube double-quantum dot. / Maki, Hideyuki; Mizuno, Tomoyuki; Suzuki, Satoru; Sato, Tetsuya; Kobayashi, Yoshihiro.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C201, 04.2009.

Research output: Contribution to journalArticle

Maki, Hideyuki ; Mizuno, Tomoyuki ; Suzuki, Satoru ; Sato, Tetsuya ; Kobayashi, Yoshihiro. / Multi-back-gate control of carbon nanotube double-quantum dot. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 4 PART 2.
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