Multichip 1.8-Gb/s high-speed space-division switching module using copper-polyimide multilayer substrate

Naoaki Yamanaka, Shiro Kikuchi, Taichi Kon, Takaaki Ohsaki

Research output: Contribution to journalConference articlepeer-review

29 Citations (Scopus)

Abstract

A high-speed multichip 32 × 32 space-division switching module for high-definition TV broadcasting and switching systems is described. This module employs a novel Si-bipolar SST (super self-aligned process technology) switching LSI and a multilayer substrate with a polyimide dielectric and a fine pattern of copper conductors. The substrate contains matrix-shaped thin-film resistors for terminated transmission and has a spiral via hole structure to increase fabrication reliability. The module has 50-Ω characteristic impedance transmission lines that have a small deviation of less than 2.5%. The multichip module can handle a signal speed of 1.8 Gb/s using 1:1 and 1:n connections. Performance results confirm that this module will be suitable for future B-ISDN (broadband integrated services digital network) communication systems.

Original languageEnglish
Pages (from-to)562-570
Number of pages9
JournalProceedings - Electronic Components and Technology Conference
Volume1
Publication statusPublished - 1990 Dec 1
Externally publishedYes
Event1990 Proceedings of the 40th Electronic Components and Technology Conference - Las Vegas, NV, USA
Duration: 1990 May 201990 May 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Multichip 1.8-Gb/s high-speed space-division switching module using copper-polyimide multilayer substrate'. Together they form a unique fingerprint.

Cite this