Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Naoki Harada; Akira Watanabe; Yuji Awano; Kohki Hikosaka; Naoki Yokoyama

doi:10.1109/4.818921

Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Naoki Harada, Akira Watanabe, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-V_p-p output was obtained from a 5-GHz, 30-mV_p-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-V_p-p amplitude at 300-MHz clock using the HEMT amplifier.

Original language	English
Pages (from-to)	66-73
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/4.818921
Publication status	Published - 2000 Jan 1

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Harada, N., Watanabe, A., Awano, Y., Hikosaka, K., & Yokoyama, N. (2000). Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems. IEEE Journal of Solid-State Circuits, 35(1), 66-73. https://doi.org/10.1109/4.818921

Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems. / Harada, Naoki; Watanabe, Akira; Awano, Yuji; Hikosaka, Kohki; Yokoyama, Naoki.

In: IEEE Journal of Solid-State Circuits, Vol. 35, No. 1, 01.01.2000, p. 66-73.

Research output: Contribution to journal › Article

@article{f90d400e086645e9851e4b2bd485afa7,

title = "Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems",

abstract = "We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.",

author = "Naoki Harada and Akira Watanabe and Yuji Awano and Kohki Hikosaka and Naoki Yokoyama",

year = "2000",

month = jan

day = "1",

doi = "10.1109/4.818921",

language = "English",

volume = "35",

pages = "66--73",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

AU - Harada, Naoki

AU - Watanabe, Akira

AU - Awano, Yuji

AU - Hikosaka, Kohki

AU - Yokoyama, Naoki

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.

AB - We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.

UR - http://www.scopus.com/inward/record.url?scp=0033888792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033888792&partnerID=8YFLogxK

U2 - 10.1109/4.818921

DO - 10.1109/4.818921

M3 - Article

AN - SCOPUS:0033888792

VL - 35

SP - 66

EP - 73

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 1

ER -

Access to Document

10.1109/4.818921