Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Naoki Harada, Akira Watanabe, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Research output: Contribution to journalArticle

2 Citations (Scopus)


We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.

Original languageEnglish
Pages (from-to)66-73
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Issue number1
Publication statusPublished - 2000 Jan 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this