Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Naoki Harada; Akira Watanabe; Yuji Awano; Kohki Hikosaka; Naoki Yokoyama

doi:10.1109/4.818921

Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Naoki Harada, Akira Watanabe, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-V_p-p output was obtained from a 5-GHz, 30-mV_p-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-V_p-p amplitude at 300-MHz clock using the HEMT amplifier.

Original language	English
Pages (from-to)	66-73
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/4.818921
Publication status	Published - 2000 Jan
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems. / Harada, Naoki; Watanabe, Akira; Awano, Yuji et al.

In: IEEE Journal of Solid-State Circuits, Vol. 35, No. 1, 01.2000, p. 66-73.

Research output: Contribution to journal › Article › peer-review

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title = "Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems",

abstract = "We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.",

author = "Naoki Harada and Akira Watanabe and Yuji Awano and Kohki Hikosaka and Naoki Yokoyama",

note = "Funding Information: Manuscript received March 16, 1999; revised August 2, 1999. This work was supported by NEDO under the MITI R&D program (Josephson Device Hybrid System Technologies Project). N. Harada, Y. Awano, K. Hikosaka, and N. Yokoyama are with Fujitsu Limited, Atsugi 243-0197 Japan. A. Watanabe is with Fujitsu Tohoku Digital Technology Ltd., Sendai 980-0811 Japan. Publisher Item Identifier S 0018-9200(00)00121-9.",

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N2 - We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.

AB - We proposed and successfully demonstrated a high-speed Josephson IC to semiconductor IC output interface circuit combining a high electron mobility transistor (HEMT) amplifier and Josephson high-voltage drivers successfully. We developed a 0.5-μm gate 77-K wide-band analog monolithic HEMT amplifier for the interface. The HEMT device consisted of InGaP/InGaAs materials stable even at 77 K. The amplifier has a differential amplifier as a first stage to cancel out ground-level fluctuations in the Josephson IC and showed a voltage gain of 23 dB and -3-dB frequency of 8 GHz. A 0.63-Vp-p output was obtained from a 5-GHz, 30-mVp-p complementary input signal. We succeeded in transferring a voltage signal from 10-stack Josephson high voltage drivers to a 50-Ω system at room temperature with 0.7-Vp-p amplitude at 300-MHz clock using the HEMT amplifier.

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Multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

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