Multivalley effect on electronic states in Si quantum dots

Yoko Hada, Mikio Eto

Research output: Contribution to journalArticle

Abstract

Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

Original languageEnglish
Pages (from-to)24-25
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr

Fingerprint

Electronic states
Semiconductor quantum dots
quantum dots
valleys
electronics
Electrons
Conduction bands
Electron energy levels
conduction bands
electrons
energy levels
energy transfer
electron energy
Magnetic fields
magnetic fields

Keywords

  • Coulomb oscillation
  • Multivalley
  • Quantum dot
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Multivalley effect on electronic states in Si quantum dots. / Hada, Yoko; Eto, Mikio.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 17, No. 1-4, 04.2003, p. 24-25.

Research output: Contribution to journalArticle

@article{1ef55ef595b549ceb7064f812b5642fa,
title = "Multivalley effect on electronic states in Si quantum dots",
abstract = "Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.",
keywords = "Coulomb oscillation, Multivalley, Quantum dot, Silicon",
author = "Yoko Hada and Mikio Eto",
year = "2003",
month = "4",
doi = "10.1016/S1386-9477(02)00711-7",
language = "English",
volume = "17",
pages = "24--25",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Multivalley effect on electronic states in Si quantum dots

AU - Hada, Yoko

AU - Eto, Mikio

PY - 2003/4

Y1 - 2003/4

N2 - Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

AB - Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

KW - Coulomb oscillation

KW - Multivalley

KW - Quantum dot

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0037391471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037391471&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00711-7

DO - 10.1016/S1386-9477(02)00711-7

M3 - Article

VL - 17

SP - 24

EP - 25

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

ER -