Multivalley effect on electronic states in Si quantum dots

Yoko Hada; Mikio Eto

doi:10.1016/S1386-9477(02)00711-7

Multivalley effect on electronic states in Si quantum dots

Yoko Hada, Mikio Eto

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

Original language	English
Pages (from-to)	24-25
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00711-7
Publication status	Published - 2003 Apr
Event	Proceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France Duration: 2002 Jul 22 → 2002 Jul 26

Keywords

Coulomb oscillation
Multivalley
Quantum dot
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(02)00711-7

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@article{1ef55ef595b549ceb7064f812b5642fa,

title = "Multivalley effect on electronic states in Si quantum dots",

abstract = "Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.",

keywords = "Coulomb oscillation, Multivalley, Quantum dot, Silicon",

author = "Yoko Hada and Mikio Eto",

year = "2003",

month = apr,

doi = "10.1016/S1386-9477(02)00711-7",

language = "English",

volume = "17",

pages = "24--25",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings pf the International Conference on Superlattices - ICSNN 2002 ; Conference date: 22-07-2002 Through 26-07-2002",

}

TY - JOUR

T1 - Multivalley effect on electronic states in Si quantum dots

AU - Hada, Yoko

AU - Eto, Mikio

PY - 2003/4

Y1 - 2003/4

N2 - Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

AB - Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

KW - Coulomb oscillation

KW - Multivalley

KW - Quantum dot

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0037391471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037391471&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00711-7

DO - 10.1016/S1386-9477(02)00711-7

M3 - Conference article

AN - SCOPUS:0037391471

SN - 1386-9477

VL - 17

SP - 24

EP - 25

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - Proceedings pf the International Conference on Superlattices - ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -

Multivalley effect on electronic states in Si quantum dots

Abstract

Keywords

ASJC Scopus subject areas

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