Multivalley effect on electronic states in Si quantum dots

Yoko Hada, Mikio Eto

Research output: Contribution to journalConference article

Abstract

Electronic states in Si quantum dots are theoretically examined, considering a multivalley structure of conduction band. In quantum dots smaller than about 5 nm, one-electron energy levels in equivalent valleys are filled consecutively with increasing the number of electrons N. Owing to the absence of intervalley spin-couplings, high-spin states are realized more often in small magnetic fields, than in GaAs quantum dots. In much larger dots, electrons are accommodated in a valley, making the highest spin of S = N/2, to gain the exchange energy.

Original languageEnglish
Pages (from-to)24-25
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr 1
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: 2002 Jul 222002 Jul 26

Keywords

  • Coulomb oscillation
  • Multivalley
  • Quantum dot
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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