N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Shinji Tanida, Kei Noda, Hiroshi Kawabata, Kazumi Matsushige

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.

Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalThin Solid Films
Volume518
Issue number2
DOIs
Publication statusPublished - 2009 Nov 30
Externally publishedYes

Fingerprint

Polymethyl Methacrylate
Thin film transistors
Buffer layers
Naphthalene
Polymethyl methacrylates
naphthalene
polymethyl methacrylate
Polymers
transistors
buffers
polymers
thin films
Electron traps
Transistors
electrons
retarding
insulators
traps
reflectance
Adsorption

Keywords

  • Air stability
  • Electron traps
  • Gate buffer layer
  • n-channel operation
  • Organic thin-film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer. / Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi.

In: Thin Solid Films, Vol. 518, No. 2, 30.11.2009, p. 571-574.

Research output: Contribution to journalArticle

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