N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Shinji Tanida, Kei Noda, Hiroshi Kawabata, Kazumi Matsushige

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.

Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalThin Solid Films
Volume518
Issue number2
DOIs
Publication statusPublished - 2009 Nov 30
Externally publishedYes

Keywords

  • Air stability
  • Electron traps
  • Gate buffer layer
  • Organic thin-film transistor
  • n-channel operation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer'. Together they form a unique fingerprint.

  • Cite this