N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Shinji Tanida; Kei Noda; Hiroshi Kawabata; Kazumi Matsushige

doi:10.1016/j.tsf.2009.07.019

N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Shinji Tanida, Kei Noda, Hiroshi Kawabata, Kazumi Matsushige

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO₂ gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO₂ surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO₂ surface.

Original language	English
Pages (from-to)	571-574
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2009.07.019
Publication status	Published - 2009 Nov 30
Externally published	Yes

Keywords

Air stability
Electron traps
Gate buffer layer
Organic thin-film transistor
n-channel operation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.07.019

Cite this

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abstract = "N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.",

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author = "Shinji Tanida and Kei Noda and Hiroshi Kawabata and Kazumi Matsushige",

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AU - Tanida, Shinji

AU - Noda, Kei

AU - Kawabata, Hiroshi

AU - Matsushige, Kazumi

PY - 2009/11/30

Y1 - 2009/11/30

N2 - N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.

AB - N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO2 surface.

KW - Air stability

KW - Electron traps

KW - Gate buffer layer

KW - Organic thin-film transistor

KW - n-channel operation

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N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

Abstract

Keywords

ASJC Scopus subject areas

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