Nano-device simulation from an atomistic view

N. Mori, G. Mil'Nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, Kohei M Itoh, S. Uno, H. Tsuchiya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: 2013 Dec 92013 Dec 11

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

Fingerprint

Green's function
Doping (additives)
Green's functions
Nanowires
Molecular dynamics
Transistors
simulation
atomic structure
Oxidation
Kinetics
nanowires
transistors
disorders
molecular dynamics
oxidation
kinetics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Mori, N., Mil'Nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., ... Tsuchiya, H. (2013). Nano-device simulation from an atomistic view. In Technical Digest - International Electron Devices Meeting, IEDM [6724564] https://doi.org/10.1109/IEDM.2013.6724564

Nano-device simulation from an atomistic view. / Mori, N.; Mil'Nikov, G.; Minari, H.; Kamakura, Y.; Zushi, T.; Watanabe, T.; Uematsu, M.; Itoh, Kohei M; Uno, S.; Tsuchiya, H.

Technical Digest - International Electron Devices Meeting, IEDM. 2013. 6724564.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mori, N, Mil'Nikov, G, Minari, H, Kamakura, Y, Zushi, T, Watanabe, T, Uematsu, M, Itoh, KM, Uno, S & Tsuchiya, H 2013, Nano-device simulation from an atomistic view. in Technical Digest - International Electron Devices Meeting, IEDM., 6724564, 2013 IEEE International Electron Devices Meeting, IEDM 2013, Washington, DC, United States, 13/12/9. https://doi.org/10.1109/IEDM.2013.6724564
Mori N, Mil'Nikov G, Minari H, Kamakura Y, Zushi T, Watanabe T et al. Nano-device simulation from an atomistic view. In Technical Digest - International Electron Devices Meeting, IEDM. 2013. 6724564 https://doi.org/10.1109/IEDM.2013.6724564
Mori, N. ; Mil'Nikov, G. ; Minari, H. ; Kamakura, Y. ; Zushi, T. ; Watanabe, T. ; Uematsu, M. ; Itoh, Kohei M ; Uno, S. ; Tsuchiya, H. / Nano-device simulation from an atomistic view. Technical Digest - International Electron Devices Meeting, IEDM. 2013.
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