Nanoindentation of polysilicon and single crystal silicon

Molecular dynamics simulation and experimental validation

Saurav Goel, Nadimul Haque Faisal, Xichun Luo, Jiwang Yan, Anupam Agrawal

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.

Original languageEnglish
Article number275304
JournalJournal of Physics D: Applied Physics
Volume47
Issue number27
DOIs
Publication statusPublished - 2014 Jul 9

Fingerprint

Silicon
Nanoindentation
nanoindentation
Polysilicon
Molecular dynamics
Single crystals
molecular dynamics
single crystals
Computer simulation
silicon
Phase transitions
crystals
phase transformations
simulation
Indentation
Grain boundaries
indentation
Substrates
grain boundaries
Dislocations (crystals)

Keywords

  • MD simulation
  • nanoindentation
  • polycrystalline silicon
  • single crystal silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Nanoindentation of polysilicon and single crystal silicon : Molecular dynamics simulation and experimental validation. / Goel, Saurav; Haque Faisal, Nadimul; Luo, Xichun; Yan, Jiwang; Agrawal, Anupam.

In: Journal of Physics D: Applied Physics, Vol. 47, No. 27, 275304, 09.07.2014.

Research output: Contribution to journalArticle

@article{13cb63ef6a024450bee58e897edeb5c5,
title = "Nanoindentation of polysilicon and single crystal silicon: Molecular dynamics simulation and experimental validation",
abstract = "This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.",
keywords = "MD simulation, nanoindentation, polycrystalline silicon, single crystal silicon",
author = "Saurav Goel and {Haque Faisal}, Nadimul and Xichun Luo and Jiwang Yan and Anupam Agrawal",
year = "2014",
month = "7",
day = "9",
doi = "10.1088/0022-3727/47/27/275304",
language = "English",
volume = "47",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "27",

}

TY - JOUR

T1 - Nanoindentation of polysilicon and single crystal silicon

T2 - Molecular dynamics simulation and experimental validation

AU - Goel, Saurav

AU - Haque Faisal, Nadimul

AU - Luo, Xichun

AU - Yan, Jiwang

AU - Agrawal, Anupam

PY - 2014/7/9

Y1 - 2014/7/9

N2 - This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.

AB - This paper presents novel advances in the deformation behaviour of polycrystalline and single crystal silicon using molecular dynamics (MD) simulation and validation of the same via nanoindentation experiments. In order to unravel the mechanism of deformation, four simulations were performed: indentation of a polycrystalline silicon substrate with a (i) Berkovich pyramidal and a (ii) spherical (arc) indenter, and (iii and iv) indentation of a single crystal silicon substrate with these two indenters. The simulation results reveal that high pressure phase transformation (HPPT) in silicon (Si-I to Si-II phase transformation) occurred in all cases; however, its extent and the manner in which it occurred differed significantly between polycrystalline silicon and single crystal silicon, and was the main driver of differences in the nanoindentation deformation behaviour between these two types of silicon. Interestingly, in polycrystalline silicon, the HPPT was observed to occur more preferentially along the grain boundaries than across the grain boundaries. An automated dislocation extraction algorithm (DXA) revealed no dislocations in the deformation zone, suggesting that HPPT is the primary mechanism in inducing plasticity in silicon.

KW - MD simulation

KW - nanoindentation

KW - polycrystalline silicon

KW - single crystal silicon

UR - http://www.scopus.com/inward/record.url?scp=84902842194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902842194&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/47/27/275304

DO - 10.1088/0022-3727/47/27/275304

M3 - Article

VL - 47

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 27

M1 - 275304

ER -