Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices

Jan H. Richter, Alexander V. Kolobov, Paul Fons, Xiaomin Wang, Kirill V. Mitrofanov, Junji Tominaga, Hitoshi Osawa, Motohiro Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the study of single devices of phase-change (Ge 2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the device in situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications
PublisherMaterials Research Society
Pages1-5
Number of pages5
ISBN (Print)9781632661456
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1563
ISSN (Print)0272-9172

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Nanometer resolution XANES imaging of in situ switched individual PC-RAM devices'. Together they form a unique fingerprint.

Cite this