TY - JOUR
T1 - Nanowire-quantum-dot lasers on flexible membranes
AU - Tatebayashi, Jun
AU - Ota, Yasutomo
AU - Ishida, Satomi
AU - Nishioka, Masao
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Funding Information:
Acknowledgments This study was supported by Project for Developing Innovation Systems of the Ministry of Education, Culture, Sports, Science and Technology, and Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Specially Promoted Research (15H05700). This study is based on results obtained from a project commissioned by the New Energy and Industrial Technology Development Organization (NEDO).
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/6
Y1 - 2018/6
N2 - We demonstrate lasing in a single nanowire with quantum dots as an active medium embedded on poly(dimethylsiloxane) membranes towards application in nanowire-based flexible nanophotonic devices. Nanowire laser structures with 50 quantum dots are grown on patterned GaAs(111)B substrates and then transferred from the as-grown substrates on poly(dimethylsiloxane) transparent flexible organosilicon membranes, by means of spin-casting and curing processes. We observe lasing oscillation in the transferred single nanowire cavity with quantum dots at 1.425 eV with a threshold pump pulse fluence of ∼876 μJ/cm2, which enables the realization of high-performance multifunctional NW-based flexible photonic devices.
AB - We demonstrate lasing in a single nanowire with quantum dots as an active medium embedded on poly(dimethylsiloxane) membranes towards application in nanowire-based flexible nanophotonic devices. Nanowire laser structures with 50 quantum dots are grown on patterned GaAs(111)B substrates and then transferred from the as-grown substrates on poly(dimethylsiloxane) transparent flexible organosilicon membranes, by means of spin-casting and curing processes. We observe lasing oscillation in the transferred single nanowire cavity with quantum dots at 1.425 eV with a threshold pump pulse fluence of ∼876 μJ/cm2, which enables the realization of high-performance multifunctional NW-based flexible photonic devices.
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U2 - 10.7567/APEX.11.065002
DO - 10.7567/APEX.11.065002
M3 - Article
AN - SCOPUS:85047952080
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 6
M1 - 065002
ER -