Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers

Ryuji Ohba, Shin ichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We propose a new noise source device utilizing narrow-channel-MOSFET having Si multi-dots to realize high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate 25 kbits/s using the Si dot MOSFET. We also present a guideline to design Si dot MOSFET for increasing generation rate.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages745-748
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

Other

OtherIEEE International Electron Devices Meeting
CountryUnited States
CityWashington, DC
Period03/12/803/12/10

Fingerprint

Random number generation
Network security

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ohba, R., Yasuda, S. I., Tanamoto, T., Uchida, K., & Fujita, S. (2003). Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers. In Technical Digest - International Electron Devices Meeting (pp. 745-748)

Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers. / Ohba, Ryuji; Yasuda, Shin ichi; Tanamoto, Tetsufumi; Uchida, Ken; Fujita, Shinobu.

Technical Digest - International Electron Devices Meeting. 2003. p. 745-748.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohba, R, Yasuda, SI, Tanamoto, T, Uchida, K & Fujita, S 2003, Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers. in Technical Digest - International Electron Devices Meeting. pp. 745-748, IEEE International Electron Devices Meeting, Washington, DC, United States, 03/12/8.
Ohba R, Yasuda SI, Tanamoto T, Uchida K, Fujita S. Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers. In Technical Digest - International Electron Devices Meeting. 2003. p. 745-748
Ohba, Ryuji ; Yasuda, Shin ichi ; Tanamoto, Tetsufumi ; Uchida, Ken ; Fujita, Shinobu. / Narrow-channel-MOSFET having Si-dots for High-rate Generation of Random Numbers. Technical Digest - International Electron Devices Meeting. 2003. pp. 745-748
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