Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics

Y. Shi, X. L. Yuan, S. L. Gu, R. Zhang, Y. D. Zheng, K. Saito, H. Ishikuro, T. Hiramoto

Research output: Contribution to conferencePaper

Abstract

The charge storage characteristics of MOSFETs with various channel dimensions were investigated in the temperature range of 20-300 K. Single charge/discharge processes are observed in the device with the narrowest channel. Furthermore, novel structures for improving the charge retention performance is discussed.

Original languageEnglish
Pages136-137
Number of pages2
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Shi, Y., Yuan, X. L., Gu, S. L., Zhang, R., Zheng, Y. D., Saito, K., Ishikuro, H., & Hiramoto, T. (1999). Narrow channel MOSFET memory based on silicon nanocrystals and charge storage characteristics. 136-137. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .