Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Yoshihiro Sugiyama, Yoshiaki Nakata, Toshiro Futatsugi, Mitsuru Sugawara, Yuji Awano, Naoki Yokoyama

    Research output: Contribution to journalArticle

    40 Citations (Scopus)

    Abstract

    We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

    Original languageEnglish
    Pages (from-to)L158-L161
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume36
    Issue number2 PART A
    DOIs
    Publication statusPublished - 1997 Feb 1

    Keywords

    • Excited states
    • FWHM
    • InAs
    • Photoluminescence
    • Quantum dot

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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