Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Yoshihiro Sugiyama, Yoshiaki Nakata, Toshiro Futatsugi, Mitsuru Sugawara, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number2 PART A
Publication statusPublished - 1997 Feb 1
Externally publishedYes

Fingerprint

Linewidth
Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
intervals

Keywords

  • Excited states
  • FWHM
  • InAs
  • Photoluminescence
  • Quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures. / Sugiyama, Yoshihiro; Nakata, Yoshiaki; Futatsugi, Toshiro; Sugawara, Mitsuru; Awano, Yuji; Yokoyama, Naoki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 2 PART A, 01.02.1997.

Research output: Contribution to journalArticle

Sugiyama, Yoshihiro ; Nakata, Yoshiaki ; Futatsugi, Toshiro ; Sugawara, Mitsuru ; Awano, Yuji ; Yokoyama, Naoki. / Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures. In: Japanese Journal of Applied Physics, Part 2: Letters. 1997 ; Vol. 36, No. 2 PART A.
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