Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Yoshihiro Sugiyama; Yoshiaki Nakata; Toshiro Futatsugi; Mitsuru Sugawara; Yuji Awano; Naoki Yokoyama

doi:10.1143/jjap.36.l158

Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Yoshihiro Sugiyama, Yoshiaki Nakata, Toshiro Futatsugi, Mitsuru Sugawara, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

Original language	English
Pages (from-to)	L158-L161
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	2 PART A
DOIs	https://doi.org/10.1143/jjap.36.l158
Publication status	Published - 1997 Feb 1
Externally published	Yes

Keywords

Excited states
FWHM
InAs
Photoluminescence
Quantum dot

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.l158

Cite this

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abstract = "We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.",

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AU - Sugiyama, Yoshihiro

AU - Nakata, Yoshiaki

AU - Futatsugi, Toshiro

AU - Sugawara, Mitsuru

AU - Awano, Yuji

AU - Yokoyama, Naoki

PY - 1997/2/1

Y1 - 1997/2/1

N2 - We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

AB - We report an effect of interval layer thickness in stacked InAs self-assembled quantum dot (QD) structures on photoluminescecnce (PL) characteristics focusing on thicknesses less than 3 nm. A drastic decrease in PL line width as narrow as 21meV at 4.2 K was obtained with 2-nm interval layers. PL measurements show that the stacked structure forms an equivalent single QD structure which vertical size is extended effectively more than that of single layer QD. This attributes to the decrease of PL line width governed by the fluctuation mainly in the vertical direction. PL from higher order quantized states up to the 4th state are also clearly observed.

KW - Excited states

KW - FWHM

KW - InAs

KW - Photoluminescence

KW - Quantum dot

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Narrow photoluminescence line width of closely stacked InAs self-assembled quantum dot structures

Abstract

Keywords

ASJC Scopus subject areas

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