Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO1-xSex anion compound semiconductors. In previous work, the ZnO1-xSex bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO.

Original languageEnglish
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages253-254
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: 2002 Sep 152002 Sep 20

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period02/9/1502/9/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Iwata, K., Yamada, A., Fons, P., Matsubara, K., & Niki, S. (2002). Natural ordering of ZnO1-xSex grown by radical source MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 253-254). [1037855] (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037855