Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata; A. Yamada; P. Fons; K. Matsubara; S. Niki

doi:10.1016/S0022-0248(02)02206-6

Natural ordering of ZnO_1-xSe_x grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

We have grown the compound semiconductor ZnO_1-xSe_x by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO_1-xSe_x layers. The period of ZnO_1-xSe_x natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO_1-xSe_x cannot be explained without taking into account the dynamical surface processes into consideration.

Original language	English
Pages (from-to)	633-637
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02206-6
Publication status	Published - 2003 Apr
Externally published	Yes
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 2002 Sept 15 → 2002 Sept 20

Keywords

A1. Bandgap engineering
A1. Self-ordering
A3. Molecular beam epitaxy
B1. Zinc oxide
B2. Semiconducting II-VI materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(02)02206-6

Cite this

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title = "Natural ordering of ZnO1-xSex grown by radical source MBE",

abstract = "We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.",

keywords = "A1. Bandgap engineering, A1. Self-ordering, A3. Molecular beam epitaxy, B1. Zinc oxide, B2. Semiconducting II-VI materials",

author = "K. Iwata and A. Yamada and P. Fons and K. Matsubara and S. Niki",

year = "2003",

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language = "English",

volume = "251",

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T1 - Natural ordering of ZnO1-xSex grown by radical source MBE

AU - Iwata, K.

AU - Yamada, A.

AU - Fons, P.

AU - Matsubara, K.

AU - Niki, S.

PY - 2003/4

Y1 - 2003/4

N2 - We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.

AB - We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.

KW - A1. Bandgap engineering

KW - A1. Self-ordering

KW - A3. Molecular beam epitaxy

KW - B1. Zinc oxide

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=0037380471&partnerID=8YFLogxK

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DO - 10.1016/S0022-0248(02)02206-6

M3 - Conference article

AN - SCOPUS:0037380471

SN - 0022-0248

VL - 251

SP - 633

EP - 637

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

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