Natural ordering of ZnO1-xSex grown by radical source MBE

K. Iwata, A. Yamada, P. Fons, K. Matsubara, S. Niki

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration.

Original languageEnglish
Pages (from-to)633-637
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - 2003 Apr
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 2002 Sep 152002 Sep 20

Keywords

  • A1. Bandgap engineering
  • A1. Self-ordering
  • A3. Molecular beam epitaxy
  • B1. Zinc oxide
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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