Near-field imaging spectroscopy of low density InAs/InP quantum dots

R. Kubota, D. Mizuno, Toshiharu Saiki, E. Dupuy, P. Regreny, M. Gendry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages87-90
Number of pages4
DOIs
Publication statusPublished - 2009
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period09/5/1009/5/14

Fingerprint

Semiconductor quantum dots
Spectroscopy
Imaging techniques
Molecular beam epitaxy
Nanostructures
Photoluminescence
indium arsenide
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kubota, R., Mizuno, D., Saiki, T., Dupuy, E., Regreny, P., & Gendry, M. (2009). Near-field imaging spectroscopy of low density InAs/InP quantum dots. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 87-90). [5012429] https://doi.org/10.1109/ICIPRM.2009.5012429

Near-field imaging spectroscopy of low density InAs/InP quantum dots. / Kubota, R.; Mizuno, D.; Saiki, Toshiharu; Dupuy, E.; Regreny, P.; Gendry, M.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. p. 87-90 5012429.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kubota, R, Mizuno, D, Saiki, T, Dupuy, E, Regreny, P & Gendry, M 2009, Near-field imaging spectroscopy of low density InAs/InP quantum dots. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., 5012429, pp. 87-90, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 09/5/10. https://doi.org/10.1109/ICIPRM.2009.5012429
Kubota R, Mizuno D, Saiki T, Dupuy E, Regreny P, Gendry M. Near-field imaging spectroscopy of low density InAs/InP quantum dots. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. p. 87-90. 5012429 https://doi.org/10.1109/ICIPRM.2009.5012429
Kubota, R. ; Mizuno, D. ; Saiki, Toshiharu ; Dupuy, E. ; Regreny, P. ; Gendry, M. / Near-field imaging spectroscopy of low density InAs/InP quantum dots. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2009. pp. 87-90
@inproceedings{aaf075c181f942ab8858ecf28cf5fe68,
title = "Near-field imaging spectroscopy of low density InAs/InP quantum dots",
abstract = "Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.",
author = "R. Kubota and D. Mizuno and Toshiharu Saiki and E. Dupuy and P. Regreny and M. Gendry",
year = "2009",
doi = "10.1109/ICIPRM.2009.5012429",
language = "English",
isbn = "9781424434336",
pages = "87--90",
booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

}

TY - GEN

T1 - Near-field imaging spectroscopy of low density InAs/InP quantum dots

AU - Kubota, R.

AU - Mizuno, D.

AU - Saiki, Toshiharu

AU - Dupuy, E.

AU - Regreny, P.

AU - Gendry, M.

PY - 2009

Y1 - 2009

N2 - Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.

AB - Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.

UR - http://www.scopus.com/inward/record.url?scp=70349487974&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349487974&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2009.5012429

DO - 10.1109/ICIPRM.2009.5012429

M3 - Conference contribution

AN - SCOPUS:70349487974

SN - 9781424434336

SP - 87

EP - 90

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -