Near-field imaging spectroscopy of low density InAs/InP quantum dots

R. Kubota, D. Mizuno, T. Saiki, E. Dupuy, P. Regreny, M. Gendry

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can bepredicted in the QDs sample from our results.

    Original languageEnglish
    Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    Pages87-90
    Number of pages4
    DOIs
    Publication statusPublished - 2009 Oct 2
    EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
    Duration: 2009 May 102009 May 14

    Publication series

    NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
    ISSN (Print)1092-8669

    Other

    OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
    CountryUnited States
    CityNewport Beach, CA
    Period09/5/1009/5/14

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Kubota, R., Mizuno, D., Saiki, T., Dupuy, E., Regreny, P., & Gendry, M. (2009). Near-field imaging spectroscopy of low density InAs/InP quantum dots. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 87-90). [5012429] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012429