TY - JOUR
T1 - Near-field optical mapping of exciton wave functions in a gaas quantum dot
AU - Matsuda, K.
AU - Saiki, T.
AU - Nomura, S.
AU - Mihara, M.
AU - Aoyagi, Y.
AU - Nair, S.
AU - Takagahara, T.
PY - 2003
Y1 - 2003
N2 - Near-field photoluminescence imaging spectroscopy of naturally occurring GaAs quantum dots (QDs) is presented. We successfully mapped out center-of -mass wave functions of an exciton confined in a GaAs QD in real space due to the enhancement of spatial resolution up to 30 nm. As a consequence, we discovered that the spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations. This novel technique can be extensively applied to wave function engineering in the design and the fabrication of quantum devices.
AB - Near-field photoluminescence imaging spectroscopy of naturally occurring GaAs quantum dots (QDs) is presented. We successfully mapped out center-of -mass wave functions of an exciton confined in a GaAs QD in real space due to the enhancement of spatial resolution up to 30 nm. As a consequence, we discovered that the spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations. This novel technique can be extensively applied to wave function engineering in the design and the fabrication of quantum devices.
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U2 - 10.1103/PhysRevLett.91.177401
DO - 10.1103/PhysRevLett.91.177401
M3 - Article
C2 - 14611375
AN - SCOPUS:0348220914
SN - 0031-9007
VL - 91
JO - Physical Review Letters
JF - Physical Review Letters
IS - 17
ER -