Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects

K. Nikawa, T. Saiki, S. Inoue, M. Ohtsu

Research output: Contribution to journalArticlepeer-review

Abstract

The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.

Original languageEnglish
Pages (from-to)883-888
Number of pages6
JournalMicroelectronics Reliability
Volume38
Issue number6-8
DOIs
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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