Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects

K. Nikawa, Toshiharu Saiki, S. Inoue, M. Ohtsu

Research output: Contribution to journalArticle

Abstract

The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.

Original languageEnglish
Pages (from-to)883-888
Number of pages6
JournalMicroelectronics Reliability
Volume38
Issue number6-8
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

change detection
Laser beams
near fields
Defects
probes
defects
Masks
Heating
Electrons
laser beams
heat sources
masks
spatial resolution
apertures
interference
heating
Hot Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects. / Nikawa, K.; Saiki, Toshiharu; Inoue, S.; Ohtsu, M.

In: Microelectronics Reliability, Vol. 38, No. 6-8, 1998, p. 883-888.

Research output: Contribution to journalArticle

@article{92e7a9bd160341dcb40e397623ae1ea1,
title = "Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects",
abstract = "The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.",
author = "K. Nikawa and Toshiharu Saiki and S. Inoue and M. Ohtsu",
year = "1998",
language = "English",
volume = "38",
pages = "883--888",
journal = "Microelectronics and Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "6-8",

}

TY - JOUR

T1 - Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH) method for identifying defects in Al and TiSi interconnects

AU - Nikawa, K.

AU - Saiki, Toshiharu

AU - Inoue, S.

AU - Ohtsu, M.

PY - 1998

Y1 - 1998

N2 - The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.

AB - The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The resulting NF-OBIRCH method has two advantages over the conventional OBIRCH method. (1) Its spatial resolution is higher. (2) The optical-beam-induced resistance change caused by heating can be observed when the aperture size is zero without interference from the photo current caused by electron-hole-pair generation. In the conventional OBIRCH method, the laser beam creates not only the resistance change, but also the photo current that can mask the resistance change signals.

UR - http://www.scopus.com/inward/record.url?scp=0032083877&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032083877&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032083877

VL - 38

SP - 883

EP - 888

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

SN - 0026-2714

IS - 6-8

ER -