Near-field optical study of semiconductor photonic devices

T. Saiki, N. Saito, M. Ohtsu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A novel-structured semiconductor photonic device is investigated using a near-field scanning optical microscope. By tailoring the shape of the fiber probe, high transmission and collection efficiencies are successfully achieved. Employing optimized fiber tips, multi-diagnostics of lateral p-n junctions is performed with the AFM operation. Measuring the spatially resolved photoluminescence spectra, we precisely examine the carrier distribution in the transition region of the p-n junctions. Electroluminescence imaging reveals the width and the position of the active region. The slant angle of the p-n interface is determined by applying the multiwavelength near-field photocurrent measurement. We also clarify the mechanism of the mode conversion due to the interaction between the evanescent light on a small aperture and optically dense semiconductors.

Original languageEnglish
Pages (from-to)162-168
Number of pages7
JournalMaterials Science and Engineering B
Volume48
Issue number1-2
DOIs
Publication statusPublished - 1997 Aug 1
Externally publishedYes

Keywords

  • Evanescent light
  • Lateral p-n junction
  • Near-field scanning optical microscope
  • Near-field spectroscopy
  • Optical fiber probe

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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