Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda, Toshiharu Saiki, S. Nomura, M. Mihara, Y. Aoyagi

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

Original languageEnglish
Pages (from-to)2291-2293
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number12
DOIs
Publication statusPublished - 2002 Sep 16
Externally publishedYes

Fingerprint

near fields
spatial resolution
photoluminescence
quantum dots
probes
optical microscopes
apertures
wave functions
preparation
optimization
scanning
fibers
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm. / Matsuda, K.; Saiki, Toshiharu; Nomura, S.; Mihara, M.; Aoyagi, Y.

In: Applied Physics Letters, Vol. 81, No. 12, 16.09.2002, p. 2291-2293.

Research output: Contribution to journalArticle

@article{ac299404f1174cf893713710edbdc0a5,
title = "Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm",
abstract = "High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.",
author = "K. Matsuda and Toshiharu Saiki and S. Nomura and M. Mihara and Y. Aoyagi",
year = "2002",
month = "9",
day = "16",
doi = "10.1063/1.1507357",
language = "English",
volume = "81",
pages = "2291--2293",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

AU - Matsuda, K.

AU - Saiki, Toshiharu

AU - Nomura, S.

AU - Mihara, M.

AU - Aoyagi, Y.

PY - 2002/9/16

Y1 - 2002/9/16

N2 - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

AB - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

UR - http://www.scopus.com/inward/record.url?scp=79956013757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956013757&partnerID=8YFLogxK

U2 - 10.1063/1.1507357

DO - 10.1063/1.1507357

M3 - Article

VL - 81

SP - 2291

EP - 2293

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -