Abstract
High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.
| Original language | English |
|---|---|
| Pages (from-to) | 2291-2293 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2002 Sep 16 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm. / Matsuda, K.; Saiki, Toshiharu; Nomura, S.; Mihara, M.; Aoyagi, Y.
In: Applied Physics Letters, Vol. 81, No. 12, 16.09.2002, p. 2291-2293.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm
AU - Matsuda, K.
AU - Saiki, Toshiharu
AU - Nomura, S.
AU - Mihara, M.
AU - Aoyagi, Y.
PY - 2002/9/16
Y1 - 2002/9/16
N2 - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.
AB - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.
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U2 - 10.1063/1.1507357
DO - 10.1063/1.1507357
M3 - Article
VL - 81
SP - 2291
EP - 2293
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
ER -