Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda; T. Saiki; S. Nomura; M. Mihara; Y. Aoyagi

doi:10.1063/1.1507357

Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

Original language	English
Pages (from-to)	2291-2293
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	12
DOIs	https://doi.org/10.1063/1.1507357
Publication status	Published - 2002 Sep 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1507357

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@article{ac299404f1174cf893713710edbdc0a5,

title = "Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm",

abstract = "High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.",

author = "K. Matsuda and T. Saiki and S. Nomura and M. Mihara and Y. Aoyagi",

year = "2002",

month = sep,

day = "16",

doi = "10.1063/1.1507357",

language = "English",

volume = "81",

pages = "2291--2293",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

AU - Matsuda, K.

AU - Saiki, T.

AU - Nomura, S.

AU - Mihara, M.

AU - Aoyagi, Y.

PY - 2002/9/16

Y1 - 2002/9/16

N2 - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

AB - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

UR - http://www.scopus.com/inward/record.url?scp=79956013757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956013757&partnerID=8YFLogxK

U2 - 10.1063/1.1507357

DO - 10.1063/1.1507357

M3 - Article

AN - SCOPUS:79956013757

VL - 81

SP - 2291

EP - 2293

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -

Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

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