Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda; T. Saiki; S. Nomura; M. Mihara; Y. Aoyagi

doi:10.1063/1.1507357

Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

Original language	English
Pages (from-to)	2291-2293
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	12
DOIs	https://doi.org/10.1063/1.1507357
Publication status	Published - 2002 Sep 16
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1507357

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abstract = "High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.",

author = "K. Matsuda and T. Saiki and S. Nomura and M. Mihara and Y. Aoyagi",

year = "2002",

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AU - Matsuda, K.

AU - Saiki, T.

AU - Nomura, S.

AU - Mihara, M.

AU - Aoyagi, Y.

PY - 2002/9/16

Y1 - 2002/9/16

N2 - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

AB - High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

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Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

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