Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm

K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.

Original languageEnglish
Pages (from-to)2291-2293
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number12
DOIs
Publication statusPublished - 2002 Sep 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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