Abstract
High-resolution photoluminescence (PL) imaging of semiconductor quantum dots (QDs) was demonstrated using a low-temperature near-field scanning optical microscope. We systematically evaluated the spatial resolution for various fiber probes with different aperture diameters ranging from 30 to 135 nm. We achieved a spatial resolution of 30 nm (∼λ/30:λ=930nm) in the PL imaging of self-assembled InAs QDs due to both improvement in probe preparation and optimization of the sample structure. The spatial resolution obtained in this study is on the scale of semiconductor quantum constituents and will make it possible to map out and manipulate the wave function in quantum-confined systems.
| Original language | English |
|---|---|
| Pages (from-to) | 2291-2293 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 81 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2002 Sep 16 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm'. Together they form a unique fingerprint.
Cite this
Matsuda, K., Saiki, T., Nomura, S., Mihara, M., & Aoyagi, Y. (2002). Near-field photoluminescence imaging of single semiconductor quantum constituents with a spatial resolution of 30 nm. Applied Physics Letters, 81(12), 2291-2293. https://doi.org/10.1063/1.1507357