Near-field photoluminescence imaging spectroscopy of an n-type modulation-doped quantum well with a lateral periodic potential

K. Matsuda, Toshiharu Saiki, S. Nomura, Y. Aoyagi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We describe near-field photoluminescence microscopy of an n-type GaAs/AlGaAs modulation-doped quantum well with a square mesh gate structure. The optical near-field image changed from a square array to an isolated dot array as the negative bias voltage between the mesh gate and back electrode was tuned. The correlation between the image and the calculated electron density distribution indicated that the photoluminescence signal was due to the recombination of electrons defined by the tunable field-induced potential and slowly diffusing holes.

Original languageEnglish
JournalNanotechnology
Volume15
Issue number6
DOIs
Publication statusPublished - 2004 Jun

Fingerprint

Semiconductor quantum wells
mesh
near fields
Photoluminescence
Modulation
quantum wells
Spectroscopy
photoluminescence
Imaging techniques
modulation
Electronic density of states
Bias voltage
spectroscopy
aluminum gallium arsenides
density distribution
Microscopic examination
microscopy
Electrodes
electrodes
Electrons

ASJC Scopus subject areas

  • Engineering (miscellaneous)
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Near-field photoluminescence imaging spectroscopy of an n-type modulation-doped quantum well with a lateral periodic potential. / Matsuda, K.; Saiki, Toshiharu; Nomura, S.; Aoyagi, Y.

In: Nanotechnology, Vol. 15, No. 6, 06.2004.

Research output: Contribution to journalArticle

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