Near-field photoluminescence of Si-doped GaAs

Sang Kee Eah, Wonho Jhe, Toshiharu Saiki, Motoichi Ohtsu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have measured surface photoluminescence properties of Si-doped bulk GaAs using a near-field scanning optical microscope. An apertured fiber probe tip is used as an emitter of excitation laser as well as a collector of luminescence from GaAs. Due to the Fabry-Perot etalon effect, the excitation laser is reflected or transmitted with an oscillation period of λHe-Ne/2 as the gap between the tip and the GaAs surface varies. The luminescence from GaAs also varies with an oscillation period of λGaAs/2 due to the same etalon effect. Therefore, the intensity of luminescence light collected by the probe tip shows a beating between two oscillations of different periods. When the probe approaches the GaAs surface, the collected luminescence intensity increases due to tunneling of evanescent wave. On the other hand, when we collect the luminescence using a lens, the intensity also increases due to similar coupling of evanescent wave into propagating wave in spite of a shadowing effect of the wide metal coating.

Original languageEnglish
Pages (from-to)450-453
Number of pages4
JournalOptical Review
Volume3
Issue number6 B
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

near fields
luminescence
photoluminescence
evanescent waves
oscillations
probes
metal coatings
optical microscopes
accumulators
excitation
lasers
emitters
lenses
scanning
fibers

Keywords

  • Fabry-Perot effect
  • GaAs
  • Near-field scanning optical microscopy
  • Photoluminescence

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Eah, S. K., Jhe, W., Saiki, T., & Ohtsu, M. (1996). Near-field photoluminescence of Si-doped GaAs. Optical Review, 3(6 B), 450-453.

Near-field photoluminescence of Si-doped GaAs. / Eah, Sang Kee; Jhe, Wonho; Saiki, Toshiharu; Ohtsu, Motoichi.

In: Optical Review, Vol. 3, No. 6 B, 1996, p. 450-453.

Research output: Contribution to journalArticle

Eah, SK, Jhe, W, Saiki, T & Ohtsu, M 1996, 'Near-field photoluminescence of Si-doped GaAs', Optical Review, vol. 3, no. 6 B, pp. 450-453.
Eah SK, Jhe W, Saiki T, Ohtsu M. Near-field photoluminescence of Si-doped GaAs. Optical Review. 1996;3(6 B):450-453.
Eah, Sang Kee ; Jhe, Wonho ; Saiki, Toshiharu ; Ohtsu, Motoichi. / Near-field photoluminescence of Si-doped GaAs. In: Optical Review. 1996 ; Vol. 3, No. 6 B. pp. 450-453.
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AB - We have measured surface photoluminescence properties of Si-doped bulk GaAs using a near-field scanning optical microscope. An apertured fiber probe tip is used as an emitter of excitation laser as well as a collector of luminescence from GaAs. Due to the Fabry-Perot etalon effect, the excitation laser is reflected or transmitted with an oscillation period of λHe-Ne/2 as the gap between the tip and the GaAs surface varies. The luminescence from GaAs also varies with an oscillation period of λGaAs/2 due to the same etalon effect. Therefore, the intensity of luminescence light collected by the probe tip shows a beating between two oscillations of different periods. When the probe approaches the GaAs surface, the collected luminescence intensity increases due to tunneling of evanescent wave. On the other hand, when we collect the luminescence using a lens, the intensity also increases due to similar coupling of evanescent wave into propagating wave in spite of a shadowing effect of the wide metal coating.

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