Near-field scanning optical microscopy of quantum dot arrays

Shintaro Nomura, Kazunari Matsuda, Toshiharu Saiki, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.

Original languageEnglish
Pages (from-to)2668-2670
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

Fingerprint

Near field scanning optical microscopy
Semiconductor quantum dots
near fields
Photoluminescence
quantum dots
microscopy
photoluminescence
scanning
optical microscopes
Microscopes
Scanning
Electronic density of states
Electronic states
Carrier concentration
density distribution
Nanostructures
Semiconductor materials
electronics

Keywords

  • GaAs
  • Near-field optical microscopy
  • Photoluminescence
  • Quantum dot array

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Near-field scanning optical microscopy of quantum dot arrays. / Nomura, Shintaro; Matsuda, Kazunari; Saiki, Toshiharu; Aoyagi, Yoshinobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 4 B, 04.2002, p. 2668-2670.

Research output: Contribution to journalArticle

@article{b5808bf1f52d4b0eba441ea83958d3ae,
title = "Near-field scanning optical microscopy of quantum dot arrays",
abstract = "Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.",
keywords = "GaAs, Near-field optical microscopy, Photoluminescence, Quantum dot array",
author = "Shintaro Nomura and Kazunari Matsuda and Toshiharu Saiki and Yoshinobu Aoyagi",
year = "2002",
month = "4",
doi = "10.1143/JJAP.41.2668",
language = "English",
volume = "41",
pages = "2668--2670",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Near-field scanning optical microscopy of quantum dot arrays

AU - Nomura, Shintaro

AU - Matsuda, Kazunari

AU - Saiki, Toshiharu

AU - Aoyagi, Yoshinobu

PY - 2002/4

Y1 - 2002/4

N2 - Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.

AB - Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.

KW - GaAs

KW - Near-field optical microscopy

KW - Photoluminescence

KW - Quantum dot array

UR - http://www.scopus.com/inward/record.url?scp=0012366038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012366038&partnerID=8YFLogxK

U2 - 10.1143/JJAP.41.2668

DO - 10.1143/JJAP.41.2668

M3 - Article

VL - 41

SP - 2668

EP - 2670

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -