Near-field scanning optical microscopy of quantum dot arrays

Shintaro Nomura, Kazunari Matsuda, Toshiharu Saiki, Yoshinobu Aoyagi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.

Original languageEnglish
Pages (from-to)2668-2670
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

Keywords

  • GaAs
  • Near-field optical microscopy
  • Photoluminescence
  • Quantum dot array

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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