Abstract
Near-field scanning optical microscope (NSOM) measurement of n-type GaAs quantum dot arrays is reported. Monochromatic photoluminescence (PL) images clearly reveal periodical PL intensity distribution. The obtained images show that the PL intensity is high in the high electron density region as calculated by a self-consistent calculation. This directly indicates that a localized electron density distribution is formed as defined by the surface gate structure, demonstrating that NSOM-PL measurement is a powerful tool in the study of the electronic states in semiconductor nanostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 2668-2670 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2002 Apr |
| Externally published | Yes |
Keywords
- GaAs
- Near-field optical microscopy
- Photoluminescence
- Quantum dot array
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)