Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer

N. Tsumori, M. Takahashi, R. Kubota, P. Regreny, M. Gendry, T. Saiki

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semiconductor quantum constituents at optical telecommunication wavelengths. An amorphous nanoaperture allows imaging spectroscopy with a high spatial resolution and high collection efficiency. This is due to the large optical contrast between the crystalline and amorphous phases of the phase-change material at visible wavelengths and its high transparency at near-infrared wavelengths. We demonstrate the effectiveness of the method by numerical simulations and photoluminescence measurements of InAs/InP quantum dots.

    Original languageEnglish
    Article number063111
    JournalApplied Physics Letters
    Volume100
    Issue number6
    DOIs
    Publication statusPublished - 2012 Feb 6

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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