Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer

N. Tsumori, M. Takahashi, R. Kubota, P. Regreny, M. Gendry, Toshiharu Saiki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semiconductor quantum constituents at optical telecommunication wavelengths. An amorphous nanoaperture allows imaging spectroscopy with a high spatial resolution and high collection efficiency. This is due to the large optical contrast between the crystalline and amorphous phases of the phase-change material at visible wavelengths and its high transparency at near-infrared wavelengths. We demonstrate the effectiveness of the method by numerical simulations and photoluminescence measurements of InAs/InP quantum dots.

Original languageEnglish
Article number063111
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
Publication statusPublished - 2012 Feb 6

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phase change materials
masks
quantum dots
wavelengths
spectroscopy
telecommunication
near fields
spatial resolution
recording
photoluminescence
high resolution
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer. / Tsumori, N.; Takahashi, M.; Kubota, R.; Regreny, P.; Gendry, M.; Saiki, Toshiharu.

In: Applied Physics Letters, Vol. 100, No. 6, 063111, 06.02.2012.

Research output: Contribution to journalArticle

Tsumori, N. ; Takahashi, M. ; Kubota, R. ; Regreny, P. ; Gendry, M. ; Saiki, Toshiharu. / Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer. In: Applied Physics Letters. 2012 ; Vol. 100, No. 6.
@article{632359d045414a30bee1038944a5faf4,
title = "Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer",
abstract = "We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semiconductor quantum constituents at optical telecommunication wavelengths. An amorphous nanoaperture allows imaging spectroscopy with a high spatial resolution and high collection efficiency. This is due to the large optical contrast between the crystalline and amorphous phases of the phase-change material at visible wavelengths and its high transparency at near-infrared wavelengths. We demonstrate the effectiveness of the method by numerical simulations and photoluminescence measurements of InAs/InP quantum dots.",
author = "N. Tsumori and M. Takahashi and R. Kubota and P. Regreny and M. Gendry and Toshiharu Saiki",
year = "2012",
month = "2",
day = "6",
doi = "10.1063/1.3683537",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Near-infrared nano-spectroscopy of semiconductor quantum dots using a phase-change mask layer

AU - Tsumori, N.

AU - Takahashi, M.

AU - Kubota, R.

AU - Regreny, P.

AU - Gendry, M.

AU - Saiki, Toshiharu

PY - 2012/2/6

Y1 - 2012/2/6

N2 - We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semiconductor quantum constituents at optical telecommunication wavelengths. An amorphous nanoaperture allows imaging spectroscopy with a high spatial resolution and high collection efficiency. This is due to the large optical contrast between the crystalline and amorphous phases of the phase-change material at visible wavelengths and its high transparency at near-infrared wavelengths. We demonstrate the effectiveness of the method by numerical simulations and photoluminescence measurements of InAs/InP quantum dots.

AB - We propose a technique that uses an optical mask layer of a phase-change material (PCM), which is used for rewritable optical recording media, to achieve highly sensitive near-field imaging spectroscopy of single semiconductor quantum constituents at optical telecommunication wavelengths. An amorphous nanoaperture allows imaging spectroscopy with a high spatial resolution and high collection efficiency. This is due to the large optical contrast between the crystalline and amorphous phases of the phase-change material at visible wavelengths and its high transparency at near-infrared wavelengths. We demonstrate the effectiveness of the method by numerical simulations and photoluminescence measurements of InAs/InP quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=84857211952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857211952&partnerID=8YFLogxK

U2 - 10.1063/1.3683537

DO - 10.1063/1.3683537

M3 - Article

AN - SCOPUS:84857211952

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063111

ER -